Description
High Current Ion ImplanterConfiguration
· UES buffer · Front and Remote UI · Loader module transfer robot and controller with 4 load ports. · IHC Source · Plasma Flood Gun · 2 Load locks · Chamber liners · Beam line graphites · Wafer Orienter · Process Chamber · Multipixel profiler · Wafer view monitor · Beamline and source turbo pumps, Pfeiffer · End station turbo pump · Remote chiller and harness · Expanded exhausted gas box with 9 stick capability · 8 gas sticks for varied species · Roplat with CompIII Electrostatic Chuck · Terminal Differential Vacuum Pump OptionOEM Model Description
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.Documents
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CATEGORY
High Current
Last Verified: 2 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
155066
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
CATEGORY
High Current
Last Verified: 2 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
155066
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
High Current Ion ImplanterConfiguration
· UES buffer · Front and Remote UI · Loader module transfer robot and controller with 4 load ports. · IHC Source · Plasma Flood Gun · 2 Load locks · Chamber liners · Beam line graphites · Wafer Orienter · Process Chamber · Multipixel profiler · Wafer view monitor · Beamline and source turbo pumps, Pfeiffer · End station turbo pump · Remote chiller and harness · Expanded exhausted gas box with 9 stick capability · 8 gas sticks for varied species · Roplat with CompIII Electrostatic Chuck · Terminal Differential Vacuum Pump OptionOEM Model Description
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.Documents
No documents