Description
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvConfiguration
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM Model Description
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.Documents
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APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
Verified
CATEGORY
High Current
Last Verified: Over 60 days ago
Key Item Details
Condition:
Parts Tool
Operational Status:
Deinstalled
Product ID:
94077
Wafer Sizes:
Unknown
Vintage:
Unknown
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APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
CATEGORY
High Current
Last Verified: Over 60 days ago
Key Item Details
Condition:
Parts Tool
Operational Status:
Deinstalled
Product ID:
94077
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvConfiguration
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM Model Description
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.Documents
No documents