Description
High Current ImplanterConfiguration
High Current ImplanterOEM Model Description
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.Documents
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APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
Verified
CATEGORY
High Current
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
91308
Wafer Sizes:
12"/300mm
Vintage:
2006
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
CATEGORY
High Current
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
91308
Wafer Sizes:
12"/300mm
Vintage:
2006
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
High Current ImplanterConfiguration
High Current ImplanterOEM Model Description
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.Documents
No documents