Description
Asset Description: IM0028 Software Version: 6.4.4 CIM: SECS Process: HIGH CURRENT Excluded Items List (Pumps, Chillers & Abatement are all excluded) Description Quantity LPT2200 1 Roughing Pump P1 1 Roughing Pump P2 1 Cryo Pump P3 (OB10) 1 Disk Chiller 1 Cryo Pump P2 (OB8) 1 Source Turbo Pump 1Configuration
Hardware Configuration System Type Description Quantity Main System GSD 200E2 HIGH CURRENT 1 Handler System Non-HPES 1 Factory Interface SMIF 1OEM Model Description
The GSD/200E2 is a 200mm standard high current implanter with a maximum energy of 180KeV. It offers reliable, high productivity and exceptional product control with unmatched cost of ownership. It meets advanced manufacturing requirements through the 180nm node and maintains high throughput for quad implants used for trench doping. It features an Extended Life Source, a Xenon-based Plasma Electron Flood, and real-time dose control for consistent low doses.Documents
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AXCELIS
GSD 200E2
CATEGORY
High Current
Last Verified: 2 days ago
Key Item Details
Condition:
Used
Operational Status:
Installed / Running
Product ID:
149514
Wafer Sizes:
8"/200mm
Vintage:
2000
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Asset Description: IM0028 Software Version: 6.4.4 CIM: SECS Process: HIGH CURRENT Excluded Items List (Pumps, Chillers & Abatement are all excluded) Description Quantity LPT2200 1 Roughing Pump P1 1 Roughing Pump P2 1 Cryo Pump P3 (OB10) 1 Disk Chiller 1 Cryo Pump P2 (OB8) 1 Source Turbo Pump 1Configuration
Hardware Configuration System Type Description Quantity Main System GSD 200E2 HIGH CURRENT 1 Handler System Non-HPES 1 Factory Interface SMIF 1OEM Model Description
The GSD/200E2 is a 200mm standard high current implanter with a maximum energy of 180KeV. It offers reliable, high productivity and exceptional product control with unmatched cost of ownership. It meets advanced manufacturing requirements through the 180nm node and maintains high throughput for quad implants used for trench doping. It features an Extended Life Source, a Xenon-based Plasma Electron Flood, and real-time dose control for consistent low doses.Documents
No documents