Designs, manufactures and services ion implantation and other processing equipment used in the fabrication of semiconductor chips.

Optima HD product (for high current applications) a single wafer was introduced in 2006, which was upgraded to the Optima HDx in 2009.

AXCELIS

OPTIMA HDx

NV GSD/HE

The NV-GSD III-90 high-current ion implanter serving as the global standard, which achieved high throughput and a compact size with the adoption of a newly developed beam line.

NV GSD III 90

OPTIMA HDxT

NVGSD-80 high-current ion implanter is equipped with a loadlock high-throughput end station (Gyro Super Disk or GSD).

NV GSD 80

The NV-GSD-A high-current ion implanter with increased beam current and improved throughput with 200-mm wafers.

NV GSD A

The Eaton/Axcelis GSD 200 is a high current implanter that can handle wafers up to 8 inches in size and has a maximum energy of 180KeV. It is part of the GSD platform, which is known for being the longest manufactured and supported batch ion implanter in the industry. Ion implantation, the technology used by this machine, involves bombarding ionized species into the first atomic layers of a solid to introduce different species into a substrate. This process can change the chemical or tribological properties of the surface, such as hardness, wear resistance, resistance to chemical attack, and reduced friction. It can also improve the oxidation resistance of coatings by forming a dense Al2O3 scale. This technology is widely used in micro-electronics, optics, bio-materials, and doped semiconductor materials.

GSD 200

NV-8200P, high current, parallel beam scan, uses GSD-A end station.

NV 8200P

1-keV class, low-energy high-current ion implanter.

NV GSD LE

A 200-eV class, extremely low-energy high-current ion implanter.

The Optima HD is a high dose ion implanter that delivers precise and productive implants across a broad applications base, including source/drain, source/drain extension and poly-doping transistor forming applications. The Optima HD is also available with Hydrogen and molecular implant capabilities.

OPTIMA HD

The GSD/200E2 is a 200mm standard high current implanter with a maximum energy of 180KeV. It offers reliable, high productivity and exceptional product control with unmatched cost of ownership. It meets advanced manufacturing requirements through the 180nm node and maintains high throughput for quad implants used for trench doping. It features an Extended Life Source, a Xenon-based Plasma Electron Flood, and real-time dose control for consistent low doses.

GSD 200E2

200mm high current implanter for low energy applications.

GSD III LED

NV GSD 200E

NV-10 high-current ion implanter supporting 150-mm wafers.

NV 10

PURION H200

The NV-GSD III-80 is a high-current ion implanter that has become a de facto standard in the industry. It is versatile, supporting a medium-current range and various applications, thanks to its post-deflection acceleration system. It caters to different wafer sizes, supporting 5, 6, and 8-inch wafers. The implanter offers a wide range of implantation energy from 2 to 180 keV, facilitated by its unique acceleration mechanism. It also features a reliable batch transfer system for smooth operations and highly effective throughput for increased productivity. The NV-GSD III-80 ensures precise results with its reliable high-dose control accuracy and maintains the integrity of the process with its high beam quality that results in low metal contamination and low cross-contamination.

NV GSD III 180

HC3 was co-developed with Axcelis' joint-venture partner Sumitomo Eaton Nova (SEN), representing a second-generation 300-mm high-current system.

NV GSD HC3

 NV-GSD III-90E low-energy, beam current enhanced, high-current ion implanter.

NV GSD III 90E

HC3 ULTRA

Purion H is a high current ion implanter. The Purion H fulfills all traditional high current requirements while extending beyond traditional high current energy and dose ranges. In order to maximize utilization and flexibility, the Purion H can process some traditional mid current implants. In addition, the Purion H is extendable into ultra-low energy applications to satisfy future process requirements including leakage current performance. 

PURION H

The LEX3-II high-current ion implanter supporting 300-mm wafers with increased beam current at an extremely low energy.

LEX3-II

NV GSD 300E

NV-10SD high-current ion implanter is equipped with a single large wafer-disk end station (Super Disk or SD).

NV 10SD

The LEX3 300-mm extremely low-energy ion, high-current implanter.

AXCELIS

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OPTIMA HDx

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OPTIMA HDxT

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