Description
No descriptionConfiguration
Process: HI TEMP OXIDEOEM Model Description
The Alpha-8SE is a batch thermal processing system that covers multiple applications over a wide temperature range. It was introduced for 200mm wafer processing in the mid-1990s and has undergone continuous improvements to productivity, reliability, and stability. The Alpha-8SE supports 100/150/200mm wafer sizes and up to 150 wafer batch size for semiconductor thin film applications including oxidation & anneal, LPCVD of Si (Poly, a-Si), Si3N4, SiO2, and high-k ALD. It enables performance for today’s most advanced diffusion and deposition processes such as ALD (Atomic Layer Deposition), low-pressure radical oxidation, and low-temperature nitrides.Documents
No documents
TEL / TOKYO ELECTRON
ALPHA-8SE
Verified
CATEGORY
Furnaces / Diffusion
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
112411
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Similar Listings
View All
TEL / TOKYO ELECTRON
ALPHA-8SE
CATEGORY
Furnaces / Diffusion
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
112411
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Process: HI TEMP OXIDEOEM Model Description
The Alpha-8SE is a batch thermal processing system that covers multiple applications over a wide temperature range. It was introduced for 200mm wafer processing in the mid-1990s and has undergone continuous improvements to productivity, reliability, and stability. The Alpha-8SE supports 100/150/200mm wafer sizes and up to 150 wafer batch size for semiconductor thin film applications including oxidation & anneal, LPCVD of Si (Poly, a-Si), Si3N4, SiO2, and high-k ALD. It enables performance for today’s most advanced diffusion and deposition processes such as ALD (Atomic Layer Deposition), low-pressure radical oxidation, and low-temperature nitrides.Documents
No documents