Description
-Purchased 6 years ago as a refurbished tool -Installed and never ran, sat in the clean room for a few years -When they de-installed it they were able to successfully run the tool with no issues -currently in storageConfiguration
No ConfigurationOEM Model Description
The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.Documents
No documents
PLASMATHERM
790
Verified
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Deinstalled
Product ID:
111120
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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PLASMATHERM
790
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Deinstalled
Product ID:
111120
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
-Purchased 6 years ago as a refurbished tool -Installed and never ran, sat in the clean room for a few years -When they de-installed it they were able to successfully run the tool with no issues -currently in storageConfiguration
No ConfigurationOEM Model Description
The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.Documents
No documents