Plasma-Therm is a global manufacturer of plasma etch, deposition, and advanced packaging equipment for the specialty semiconductor and nanotechnology markets.

Apex SLR: ICP-Etch
-Ideal for small volume production and R&D. Small footprint design
-Load lock method, manual load specification
-Adopts 2MHz ICP source. Improved etching rate and uniformity with high-density plasma
-ICP source section can be opened and closed 90 degrees for easy access to the lower electrode, and equipped with a slide mechanism for easy turbo pump replacement.
-Independent control of plasma density and bias possible
-Compatible with chlorine-based etching applications
-Compatible with various end point detection methods

PLASMATHERM

APEX SLR

VERSALOCK

Gen 3

Batchtop VII 

SLR-7701 ICP

PINNACLE

7000

The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.

"The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components.
The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

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Top PLASMATHERM Dry / Plasma Etch

730

Gen 3

APEX SLR

PINNACLE

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