Description
No descriptionConfiguration
<p>Tool is operating in clean room.</p><p> </p><p>[Chamber 1]</p><p>For Ti/TiN PVD chamber,SIP</p><p>DCPS;Master,PINNACLE,AE,for PVD</p><p> Slave,PINNACLE,AE,for PVD</p><p>RFPS;GHW-12,ENI,for Bias </p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>SLT ESC type stage</p><p>Ar;50/20sccm, N2;200sccm</p><p> </p><p>[Chamber 2]</p><p>For Al-Cu PVD chamber,ALPS</p><p>DCPS;Master,OPTIMA DCG-200,ENI,for PVD</p><p> Slave,OPTIMA DCG-200,ENI,for PVD</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>SLT ESC type stage</p><p>Ar;100/20sccm</p><p> </p><p>[Chamber 3]</p><p>For Al-Cu PVD chamber</p><p>DCPS;Master,OPTIMA DCG-200,ENI,for PVD</p><p> Slave,OPTIMA DCG-200,ENI,for PVD</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>HT ESC type stage</p><p>Ar;200/20sccm</p><p> </p><p>[Chamber 4]</p><p>For Al-Cu PVD chamber</p><p>DCPS;Master,OPTIMA DCG-200,ENI,for PVD</p><p> Slave,OPTIMA DCG-200,ENI,for PVD</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>HT ESC type stage</p><p>Ar;200/20sccm</p><p> </p><p>[Chamber 5]</p><p>For Ti/TiN PVD chamber,SIP</p><p>DCPS;Master,PINNACLE,AE,for PVD</p><p> Slave,PINNACLE,AE,for PVD</p><p>RFPS;GHW-12,ENI,for Bias </p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>SLT ESC type stage</p><p>Ar;50/20sccm, N2;200sccm</p><p> </p><p>[Chamber C]</p><p>For Pre-CLN chamber,PCXT</p><p>RFPS;CDX-2000,13.56/2MHz,COMDEL,for BIAS/SLA</p><p>PUMP/TMP MAG1300,LEYBOLD.</p><p>Ar;200/20sccm</p><p> </p><p>[Chamber D]</p><p>For TiN PVD chamber</p><p>DCPS;OPTIMA DCG-200,ENI,for PVD</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>A101 type stage</p><p>Ar/N2;150/200sccm</p><p> </p><p>[Chamber E]</p><p>For Degas,Plate heater</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>Ar,press. Controlled</p><p> </p><p>[Chamber E]</p><p>For Degas,Plate heater</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>Ar,press. Controlled</p><p> </p><p>Pictures will be collected.</p><p>Missing or damaged parts: Not reported.</p>OEM Model Description
The Applied Materials ENDURA II is a highly advanced platform used in the semiconductor industry for physical vapor deposition (PVD) processes. It is designed to deposit thin films of various materials onto semiconductor wafers with exceptional precision and uniformity.Documents
No documents
CATEGORY
PVD / Sputtering
Last Verified: 2 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
21098
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
ENDURA II
CATEGORY
PVD / Sputtering
Last Verified: 2 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
21098
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
<p>Tool is operating in clean room.</p><p> </p><p>[Chamber 1]</p><p>For Ti/TiN PVD chamber,SIP</p><p>DCPS;Master,PINNACLE,AE,for PVD</p><p> Slave,PINNACLE,AE,for PVD</p><p>RFPS;GHW-12,ENI,for Bias </p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>SLT ESC type stage</p><p>Ar;50/20sccm, N2;200sccm</p><p> </p><p>[Chamber 2]</p><p>For Al-Cu PVD chamber,ALPS</p><p>DCPS;Master,OPTIMA DCG-200,ENI,for PVD</p><p> Slave,OPTIMA DCG-200,ENI,for PVD</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>SLT ESC type stage</p><p>Ar;100/20sccm</p><p> </p><p>[Chamber 3]</p><p>For Al-Cu PVD chamber</p><p>DCPS;Master,OPTIMA DCG-200,ENI,for PVD</p><p> Slave,OPTIMA DCG-200,ENI,for PVD</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>HT ESC type stage</p><p>Ar;200/20sccm</p><p> </p><p>[Chamber 4]</p><p>For Al-Cu PVD chamber</p><p>DCPS;Master,OPTIMA DCG-200,ENI,for PVD</p><p> Slave,OPTIMA DCG-200,ENI,for PVD</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>HT ESC type stage</p><p>Ar;200/20sccm</p><p> </p><p>[Chamber 5]</p><p>For Ti/TiN PVD chamber,SIP</p><p>DCPS;Master,PINNACLE,AE,for PVD</p><p> Slave,PINNACLE,AE,for PVD</p><p>RFPS;GHW-12,ENI,for Bias </p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>SLT ESC type stage</p><p>Ar;50/20sccm, N2;200sccm</p><p> </p><p>[Chamber C]</p><p>For Pre-CLN chamber,PCXT</p><p>RFPS;CDX-2000,13.56/2MHz,COMDEL,for BIAS/SLA</p><p>PUMP/TMP MAG1300,LEYBOLD.</p><p>Ar;200/20sccm</p><p> </p><p>[Chamber D]</p><p>For TiN PVD chamber</p><p>DCPS;OPTIMA DCG-200,ENI,for PVD</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>A101 type stage</p><p>Ar/N2;150/200sccm</p><p> </p><p>[Chamber E]</p><p>For Degas,Plate heater</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>Ar,press. Controlled</p><p> </p><p>[Chamber E]</p><p>For Degas,Plate heater</p><p>PUMP/CRYO,SICERA KZ-8Ｌ3Ｃ,SHI</p><p>Ar,press. Controlled</p><p> </p><p>Pictures will be collected.</p><p>Missing or damaged parts: Not reported.</p>OEM Model Description
The Applied Materials ENDURA II is a highly advanced platform used in the semiconductor industry for physical vapor deposition (PVD) processes. It is designed to deposit thin films of various materials onto semiconductor wafers with exceptional precision and uniformity.Documents
No documents