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LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"
    Description
    PECVD
    Configuration
    No Configuration
    OEM Model Description
    The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.
    Documents

    No documents

    verified-listing-icon

    Verified

    CATEGORY
    PECVD

    Last Verified: 4 days ago

    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    149853


    Wafer Sizes:

    6"/150mm


    Vintage:

    Unknown


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Similar Listings
    View All
    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    PECVD
    Vintage: 0Condition: Used
    Last Verified4 days ago

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    verified-listing-icon
    Verified
    CATEGORY
    PECVD
    Last Verified: 4 days ago
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    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    149853


    Wafer Sizes:

    6"/150mm


    Vintage:

    Unknown


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Description
    PECVD
    Configuration
    No Configuration
    OEM Model Description
    The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.
    Documents

    No documents

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