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LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"
    Description
    No description
    Configuration
    No Configuration
    OEM Model Description
    The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.
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    verified-listing-icon

    Verified

    CATEGORY
    PECVD

    Last Verified: 2 days ago

    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    145129


    Wafer Sizes:

    6"/150mm


    Vintage:

    2021


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
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    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    PECVD
    Vintage: 2003Condition: Used
    Last Verified2 days ago

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    verified-listing-icon
    Verified
    CATEGORY
    PECVD
    Last Verified: 2 days ago
    listing-photo-d74a158e8f08434fbe1972a1ee7bcc83-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/91212/d74a158e8f08434fbe1972a1ee7bcc83/731eebbb960549dba015387aaff78a4c_53d1ba08d7c54259bd5affbf894190a51201a_mw.jpeg
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    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    145129


    Wafer Sizes:

    6"/150mm


    Vintage:

    2021


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Description
    No description
    Configuration
    No Configuration
    OEM Model Description
    The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.
    Documents

    No documents

    Similar Listings
    View All
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