Description

SSM495 HG CV System for EPI resistivity measurement

Configuration

■ SSM 42 Capacitance Measurement Unit ■ Motor control unit ■ Pneumatic control Unit ■ PC System ■ PROCAP software ■ Performance - CV Meter Noise Test (Schottky Diode Test): 1 STD(%) <0.167% - MOS Wafer Area Test : 1 STD(%) <0.1% ■ Capacitance: 0.5~ 2000pF ■ Conductance: 0.5 ~ 2000μS ■ DC Bias voltage: ± 250V ■ Ramp Rate: 0 ~ 50 V/s continuously variable ■ Drive Signal Frequency at 1Mhz voltage=15mV rms ■Stress Voltage: ± 250V ■ CDA: 80~100psi, Nitrogen for sample purge:0~15psi ■ Ambient temperature: 18° - 25°C ± 2°C over 24 hour period

OEM Model Description

The SSM 495 is an automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon and front-end semiconductor process development and production. It is capable of monitoring a wide range of parameters, including low-k dielectric materials, epi resistivity, defect density, ion implant dose, metallic contamination, oxide quality, interlayer dielectric quality, gate oxide integrity, high and low k dielectric development, and threshold voltage. The advanced mercury probe used in the SSM 495 provides a stable and reproducible electrical contact, eliminating the need for slow and expensive lithography and metallization steps. Additionally, the unique patented mercury probe allows the wafer to be placed face up, eliminating contamination and damage caused by traditional face-down mercury probe systems. This system is ideal for monitoring various aspects of semiconductor production and development.