The SSM 495 is an automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon and front-end semiconductor process development and production. It is capable of monitoring a wide range of parameters, including low-k dielectric materials, epi resistivity, defect density, ion implant dose, metallic contamination, oxide quality, interlayer dielectric quality, gate oxide integrity, high and low k dielectric development, and threshold voltage. The advanced mercury probe used in the SSM 495 provides a stable and reproducible electrical contact, eliminating the need for slow and expensive lithography and metallization steps. Additionally, the unique patented mercury probe allows the wafer to be placed face up, eliminating contamination and damage caused by traditional face-down mercury probe systems. This system is ideal for monitoring various aspects of semiconductor production and development.

2000

470I

The SSM 530 is a fully automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon production and front-end semiconductor processing. It has the same abilities as the SSM 5130, but it does not have a robot. The SSM 530 eliminates the need for costly metal and poly deposition processes by using a pneumatically controlled, non-damaging probe design and a top-side mercury contact. It features an extremely stable contact area and uses only a small quantity of mercury to make highly repeatable measurements for process development and process monitoring applications. Typical applications include EPI resistivity, low-k dielectric constant, and oxide integrity. The system can handle wafer diameters from 200 mm to 300 mm and can perform single-site and multiple-site maps. It also features automatic face-up loading to prevent wafer damage, precision pressure regulators for Hg contact, and PROCAP software that provides a full suite of measurements.

The SSM 5130 is a fully automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon production and front-end semiconductor processing. Wafers are robotically loaded onto the mapping stage from a cassette or opened FOUP, and the test wafer moves to each site specified in a pre-programmed map as electrical characterization tests are made. The system stores test data and reports it in a variety of formats. The SSM 5130 eliminates the need for costly metal and poly deposition processes by using a pneumatically controlled, non-damaging probe design and a top-side mercury contact. With separate probe and chuck vacuum lines, the system features an extremely stable contact area and uses only a small quantity of mercury to make highly repeatable measurements for process development and process monitoring applications. Typical applications of the SSM 5130 include EPI resistivity, low-k dielectric constant, and oxide integrity. The SSM 5130 can handle wafer diameters from 200 mm to 300 mm, and offers single-site and multiple-site maps. Automatic face-up loading prevents wafer damage, and precision pressure regulators are used for Hg contact. The PROCAP software provides a full suite of measurements. 

5130

The SSM 5200 is an off-line metrology system that measures a variety of electrical oxide and dielectric characteristics on monitor wafers. It can measure capacitive effective thickness and equivalent oxide thickness of advanced gate dielectrics less than 1 nanometer thick with high precision. It also includes a wide range of current voltage (IV) measurements such as leakage current, TDDB, and SILC. The SSM 5200 uses a small elastic probe to form a temporary gate on the dielectric surface and an integrated pattern recognition system to locate scribe line test areas. The elastic probe has a diameter of less than 30 µm and does not damage the dielectric surface.

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