Description
HG-CV System for EPI resistivity measurementConfiguration
■ SSM 52 Capacitance Measurement Unit ■ Motor control unit ■ Pneumatic control Unit ■ PC System ■ PROCAP software ■ Performance - CV Meter Noise Test (Schottky Diode Test): 1 STD(%) <0.167% - MOS Wafer Area Test : 1 STD(%) <0.1% ■ Capacitance: 0 ~ 2000pF(1MHz), 1 ~ 20,000pF(100KHz) ■ Conductance: 0 ~ 2000μS ■ DC Bias voltage: ± 250V ■ Ramp Rate: 0 ~ 50 V/s continuously variable ■ Drive Signal Frequency at 1Mhz voltage=15mV rms ■ Stress Voltage: ± 250V ■ CDA: 80~100psi, Nitrogen for sample purge:0~15psi ■ Ambient temperature: 18° - 25°C ± 2°C over 24 hour periodOEM Model Description
The MCV automatic mapping systems provide a Mercury C-V measurement for non-patterned wafers used in epitaxial silicon production and front-end semiconductor processing.Documents
No documents
SEMILAB
MCV 2500
Verified
CATEGORY
Metrology
Last Verified: Over 60 days ago
Key Item Details
Condition:
Refurbished
Operational Status:
Unknown
Product ID:
101993
Wafer Sizes:
12"/300mm
Vintage:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SEMILAB
MCV 2500
CATEGORY
Metrology
Last Verified: Over 60 days ago
Key Item Details
Condition:
Refurbished
Operational Status:
Unknown
Product ID:
101993
Wafer Sizes:
12"/300mm
Vintage:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
HG-CV System for EPI resistivity measurementConfiguration
■ SSM 52 Capacitance Measurement Unit ■ Motor control unit ■ Pneumatic control Unit ■ PC System ■ PROCAP software ■ Performance - CV Meter Noise Test (Schottky Diode Test): 1 STD(%) <0.167% - MOS Wafer Area Test : 1 STD(%) <0.1% ■ Capacitance: 0 ~ 2000pF(1MHz), 1 ~ 20,000pF(100KHz) ■ Conductance: 0 ~ 2000μS ■ DC Bias voltage: ± 250V ■ Ramp Rate: 0 ~ 50 V/s continuously variable ■ Drive Signal Frequency at 1Mhz voltage=15mV rms ■ Stress Voltage: ± 250V ■ CDA: 80~100psi, Nitrogen for sample purge:0~15psi ■ Ambient temperature: 18° - 25°C ± 2°C over 24 hour periodOEM Model Description
The MCV automatic mapping systems provide a Mercury C-V measurement for non-patterned wafers used in epitaxial silicon production and front-end semiconductor processing.Documents
No documents