Description
EUV mask and mask blank reflectometer (EUV-MBR) Stand-alone EUV mask blank reflectometer Distinctive EUV-MBR properties • Wavelength accuracy better than 2 pm • Small Spot down to < 250 x 100 μm2 • 2000 spectral channels of 1.7 pm width. • Less than 20 seconds exposure time for measuring full spectrum at small spot with full resolution • Precision on CWL_50 < 1 pm • Precision on reflectivity: < 0.1% abs. • Accuracy on reflectivity: < 0.3 % abs. • Resolution limit on absorbers: < 0.1 % • Fiducial mark referenced positioning • Direct quantification of scatter and flare.Configuration
Spectral range measured < 12.5 to > 14.5 nm Spectral Resolution ≈ 1.7 pm Measured spot size Typ. 250x100 μm2 -- Measured Signal dynamics > 12 bit ➔ From < 0.01 % to > 60% CWL_50 Av. Accuracy: ≤ 3 pm CWL_50 Precision, 3σ ≤ 1 pm Peak Reflectivity Av. Accuracy Rpeak ~ 65% ≤ 0.5 % absolute Peak Reflectivity Precision Rpeak ~ 65%, 3σ ≤ 0.5 %absolute Peak Reflectivity Av. Accuracy Rpeak ~ 1% ≤ 0.05 % absolute Peak Reflectivity : Precision Rpeak ~ 1%: ≤ 0.05%: , 3σ ≤ 0.02% absoluteOEM Model Description
Our flagship, the EUV-MBR is a stand alone tool for automated characterization of multilayers and absorbers of EUV masks and mask blanks based on our wellDocuments
No documents
RESEARCH INSTRUMENTS
EUV MBR
Verified
CATEGORY
Metrology
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
70399
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
RESEARCH INSTRUMENTS
EUV MBR
CATEGORY
Metrology
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
70399
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
EUV mask and mask blank reflectometer (EUV-MBR) Stand-alone EUV mask blank reflectometer Distinctive EUV-MBR properties • Wavelength accuracy better than 2 pm • Small Spot down to < 250 x 100 μm2 • 2000 spectral channels of 1.7 pm width. • Less than 20 seconds exposure time for measuring full spectrum at small spot with full resolution • Precision on CWL_50 < 1 pm • Precision on reflectivity: < 0.1% abs. • Accuracy on reflectivity: < 0.3 % abs. • Resolution limit on absorbers: < 0.1 % • Fiducial mark referenced positioning • Direct quantification of scatter and flare.Configuration
Spectral range measured < 12.5 to > 14.5 nm Spectral Resolution ≈ 1.7 pm Measured spot size Typ. 250x100 μm2 -- Measured Signal dynamics > 12 bit ➔ From < 0.01 % to > 60% CWL_50 Av. Accuracy: ≤ 3 pm CWL_50 Precision, 3σ ≤ 1 pm Peak Reflectivity Av. Accuracy Rpeak ~ 65% ≤ 0.5 % absolute Peak Reflectivity Precision Rpeak ~ 65%, 3σ ≤ 0.5 %absolute Peak Reflectivity Av. Accuracy Rpeak ~ 1% ≤ 0.05 % absolute Peak Reflectivity : Precision Rpeak ~ 1%: ≤ 0.05%: , 3σ ≤ 0.02% absoluteOEM Model Description
Our flagship, the EUV-MBR is a stand alone tool for automated characterization of multilayers and absorbers of EUV masks and mask blanks based on our wellDocuments
No documents