Description
TUBING,CENTER,RH,ROTATING MASS SLIT P/N: E12004040/E11084590 TUBING,CENTER,LH,ROTATING MASS SLIT P/N: E11084591/E12004041Configuration
No ConfigurationOEM Model Description
The VIISion 80 ion implanter beam line incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.Documents
No documents
APPLIED MATERIALS (AMAT) / VARIAN
VIISion 80
Verified
CATEGORY
High Current
Last Verified: Over 60 days ago
Key Item Details
Condition:
Parts Tool
Operational Status:
Unknown
Product ID:
54324
Wafer Sizes:
6"/150mm, 8"/200mm
Vintage:
2022
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT) / VARIAN
VIISion 80
CATEGORY
High Current
Last Verified: Over 60 days ago
Key Item Details
Condition:
Parts Tool
Operational Status:
Unknown
Product ID:
54324
Wafer Sizes:
6"/150mm, 8"/200mm
Vintage:
2022
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
TUBING,CENTER,RH,ROTATING MASS SLIT P/N: E12004040/E11084590 TUBING,CENTER,LH,ROTATING MASS SLIT P/N: E11084591/E12004041Configuration
No ConfigurationOEM Model Description
The VIISion 80 ion implanter beam line incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.Documents
No documents