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ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
Description
ASM Epsilon 2000 EPI Complete with HDD and Software included.
Configuration
Upgraded from E2 to E2000. Has TCS with ASM LVC, integrated LPE bubbler Atmospheric system, N-type / P-type doping.
OEM Model Description
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.
Documents

No documents

CATEGORY
Epitaxial deposition (EPI)

Last Verified: Over 60 days ago

Key Item Details

Condition:

Refurbished


Operational Status:

Unknown


Product ID:

112717


Wafer Sizes:

6"/150mm


Vintage:

Unknown


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

ASM

EPSILON E2000

verified-listing-icon
Verified
CATEGORY
Epitaxial deposition (EPI)
Last Verified: Over 60 days ago
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Key Item Details

Condition:

Refurbished


Operational Status:

Unknown


Product ID:

112717


Wafer Sizes:

6"/150mm


Vintage:

Unknown


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
ASM Epsilon 2000 EPI Complete with HDD and Software included.
Configuration
Upgraded from E2 to E2000. Has TCS with ASM LVC, integrated LPE bubbler Atmospheric system, N-type / P-type doping.
OEM Model Description
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.
Documents

No documents