Description
ASM Epsilon 2000 EPI Complete with HDD and Software included.Configuration
Upgraded from E2 to E2000. Has TCS with ASM LVC, integrated LPE bubbler Atmospheric system, N-type / P-type doping.OEM Model Description
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.Documents
No documents
ASM
EPSILON E2000
Verified
CATEGORY
Epitaxial deposition (EPI)
Last Verified: Over 60 days ago
Key Item Details
Condition:
Refurbished
Operational Status:
Unknown
Product ID:
112717
Wafer Sizes:
6"/150mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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View AllASM
EPSILON E2000
CATEGORY
Epitaxial deposition (EPI)
Last Verified: Over 60 days ago
Key Item Details
Condition:
Refurbished
Operational Status:
Unknown
Product ID:
112717
Wafer Sizes:
6"/150mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
ASM Epsilon 2000 EPI Complete with HDD and Software included.Configuration
Upgraded from E2 to E2000. Has TCS with ASM LVC, integrated LPE bubbler Atmospheric system, N-type / P-type doping.OEM Model Description
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.Documents
No documents