Description
System hand: Left hand for 200mm, Right hand for 150mm available, Maint Console: Mini Maint CPU: 68040 Software Ver: 7.65 RP/ATM:RP Vacuum load lock: Ask RP Orientation: Bottom feed Gas Panel orientation: Top Feed TCS Mini Bubbler: 10L LPE Gas Detection: Gastec H2/HCL Temp Controller: FoxboroConfiguration
No ConfigurationOEM Model Description
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.Documents
No documents
Verified
CATEGORY
Epitaxial deposition (EPI)
Last Verified: 2 days ago
Key Item Details
Condition:
Refurbished
Operational Status:
Unknown
Product ID:
139576
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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ASM
EPSILON E2000
CATEGORY
Epitaxial deposition (EPI)
Last Verified: 2 days ago
Key Item Details
Condition:
Refurbished
Operational Status:
Unknown
Product ID:
139576
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
System hand: Left hand for 200mm, Right hand for 150mm available, Maint Console: Mini Maint CPU: 68040 Software Ver: 7.65 RP/ATM:RP Vacuum load lock: Ask RP Orientation: Bottom feed Gas Panel orientation: Top Feed TCS Mini Bubbler: 10L LPE Gas Detection: Gastec H2/HCL Temp Controller: FoxboroConfiguration
No ConfigurationOEM Model Description
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.Documents
No documents