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ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
Description
No warranty
Configuration
No Configuration
OEM Model Description
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.
Documents
CATEGORY
Epitaxial deposition (EPI)

Last Verified: Over 60 days ago

Key Item Details

Condition:

Used


Operational Status:

Installed / Running


Product ID:

113487


Wafer Sizes:

Unknown


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

ASM

EPSILON E2000

verified-listing-icon
Verified
CATEGORY
Epitaxial deposition (EPI)
Last Verified: Over 60 days ago
listing-photo-548b773d98d8459ab9e552ef7e8ea657-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/74669/548b773d98d8459ab9e552ef7e8ea657/1eb1847f31a94b75ab775a1d2fe6c3f9_17_mw.jpg
listing-photo-548b773d98d8459ab9e552ef7e8ea657-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/74669/548b773d98d8459ab9e552ef7e8ea657/607d968068294b4b8837ef6cbcf92859_12_mw.jpg
Key Item Details

Condition:

Used


Operational Status:

Installed / Running


Product ID:

113487


Wafer Sizes:

Unknown


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No warranty
Configuration
No Configuration
OEM Model Description
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.
Documents