Description
Epitaxial Silicon (EPI)Configuration
Epi Centura 300 - RP (2-chamber) Applied Materials Centura 300 epitaxy system configured for reduced-pressure (RP) processing with two reactor modules Equipment front-end module with dual nitrogen-purged load ports, supporting both FOUP and open cassette handling (OCLP) Factory Interface platform revision 5.3 Wafer handling transfer chamber Magnetically driven single-blade wafer robot with integrated on-the-fly (OTF) alignment and wafer-on-blade (WOB) presence sensing Centralized pneumatic manifold distribution Dual automated batch loadlock chambers, each equipped with point-of-use vacuum pumping (iPUP) Two epitaxial process reactors Top and bottom quartz dome assemblies within each process module Upper and lower lamp heating arrays Wafer support susceptors Jet Pack air-based cooling subsystem Process exhaust routing system Low-temperature optical pyrometer instrumentation Closed-loop temperature regulation via optical pyrometry and PID control algorithms Remote structural support frame configuration Next-generation reduced-pressure gas delivery panel with integrated MFCs and automated valve control Safety systems including leak detection and interlock protection Vacuum configuration includes dedicated iPUP for the transfer module and remote high-capacity vacuum pumps for each process chamber System control computer: c300NT platform operating on Windows NT Front-end PC interface used for system control, configuration, and operator interaction with the c300NT controllerOEM Model Description
Applied Centura RP (reduced pressure) Epi systems.Documents
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CATEGORY
Epitaxial deposition (EPI)
Last Verified: 6 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
150084
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
CENTURA RP EPI
CATEGORY
Epitaxial deposition (EPI)
Last Verified: 6 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
150084
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Epitaxial Silicon (EPI)Configuration
Epi Centura 300 - RP (2-chamber) Applied Materials Centura 300 epitaxy system configured for reduced-pressure (RP) processing with two reactor modules Equipment front-end module with dual nitrogen-purged load ports, supporting both FOUP and open cassette handling (OCLP) Factory Interface platform revision 5.3 Wafer handling transfer chamber Magnetically driven single-blade wafer robot with integrated on-the-fly (OTF) alignment and wafer-on-blade (WOB) presence sensing Centralized pneumatic manifold distribution Dual automated batch loadlock chambers, each equipped with point-of-use vacuum pumping (iPUP) Two epitaxial process reactors Top and bottom quartz dome assemblies within each process module Upper and lower lamp heating arrays Wafer support susceptors Jet Pack air-based cooling subsystem Process exhaust routing system Low-temperature optical pyrometer instrumentation Closed-loop temperature regulation via optical pyrometry and PID control algorithms Remote structural support frame configuration Next-generation reduced-pressure gas delivery panel with integrated MFCs and automated valve control Safety systems including leak detection and interlock protection Vacuum configuration includes dedicated iPUP for the transfer module and remote high-capacity vacuum pumps for each process chamber System control computer: c300NT platform operating on Windows NT Front-end PC interface used for system control, configuration, and operator interaction with the c300NT controllerOEM Model Description
Applied Centura RP (reduced pressure) Epi systems.Documents
No documents