Description
WCVD(Ch.A) Tungsten deposition; 1x (Ch.B) plasma corrosion; 1 transfer chamber (robot+elevator); 1 input chamber for 2 cassettes and 1 wafer alignerConfiguration
No ConfigurationOEM Model Description
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.Documents
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APPLIED MATERIALS (AMAT)
P5000 ETCH
Verified
CATEGORY
Dry / Plasma Etch
Last Verified: 9 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
115981
Wafer Sizes:
Unknown
Vintage:
1994
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
P5000 ETCH
CATEGORY
Dry / Plasma Etch
Last Verified: 9 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
115981
Wafer Sizes:
Unknown
Vintage:
1994
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
WCVD(Ch.A) Tungsten deposition; 1x (Ch.B) plasma corrosion; 1 transfer chamber (robot+elevator); 1 input chamber for 2 cassettes and 1 wafer alignerConfiguration
No ConfigurationOEM Model Description
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.Documents
No documents