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Description
No Cable & ChillerConfiguration
Applied Materials P5000 8 Inches Etch MxP+ Poly 3 ChambersOEM Model Description
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.Documents
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PREFERRED
SELLER
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Buyer pays 12% premium of final sale price
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
74633
Wafer Sizes:
8"/200mm
Vintage:
1997
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Similar Listings
View All
PREFERRED
SELLER
APPLIED MATERIALS (AMAT)
P5000 ETCH
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Buyer pays 12% premium of final sale price
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
74633
Wafer Sizes:
8"/200mm
Vintage:
1997
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No Cable & ChillerConfiguration
Applied Materials P5000 8 Inches Etch MxP+ Poly 3 ChambersOEM Model Description
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.Documents
No documents
Similar Listings
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