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APPLIED MATERIALS (AMAT) P5000 ETCH
  • APPLIED MATERIALS (AMAT) P5000 ETCH
  • APPLIED MATERIALS (AMAT) P5000 ETCH
  • APPLIED MATERIALS (AMAT) P5000 ETCH
Description
No description
Configuration
No Configuration
OEM Model Description
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
Documents

No documents

CATEGORY
Dry / Plasma Etch

Last Verified: 10 days ago

Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

120164


Wafer Sizes:

Unknown


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
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APPLIED MATERIALS (AMAT)

P5000 ETCH

verified-listing-icon
Verified
CATEGORY
Dry / Plasma Etch
Last Verified: 10 days ago
listing-photo-3486e6644d074be6814a644a8ee6f82b-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

120164


Wafer Sizes:

Unknown


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No description
Configuration
No Configuration
OEM Model Description
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
Documents

No documents

Similar Listings
View All