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TEL / TOKYO ELECTRON TRIAS SPA
  • TEL / TOKYO ELECTRON TRIAS SPA
  • TEL / TOKYO ELECTRON TRIAS SPA
  • TEL / TOKYO ELECTRON TRIAS SPA
  • TEL / TOKYO ELECTRON TRIAS SPA
  • TEL / TOKYO ELECTRON TRIAS SPA
  • TEL / TOKYO ELECTRON TRIAS SPA
  • TEL / TOKYO ELECTRON TRIAS SPA
Description
CVD
Configuration
CVD
OEM Model Description
The TEL (Tokyo Electron) Trias SPA is a single-wafer plasma processing system designed for semiconductor manufacturing. It utilizes Tokyo Electron's Slot Plane Antenna (SPA) technology to generate high-density, low-electron-temperature plasma, enabling low-damage, low-temperature plasma treatments. This system is particularly suited for critical front-end-of-line (FEOL) applications, including gate nitridation, gate recovery oxidation, and shallow trench isolation (STI) liner oxidation.
Documents

No documents

CATEGORY
Deposition

Last Verified: Over 60 days ago

Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

21423


Wafer Sizes:

12"/300mm


Vintage:

2010


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

TEL / TOKYO ELECTRON

TRIAS SPA

verified-listing-icon
Verified
CATEGORY
Deposition
Last Verified: Over 60 days ago
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Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

21423


Wafer Sizes:

12"/300mm


Vintage:

2010


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
CVD
Configuration
CVD
OEM Model Description
The TEL (Tokyo Electron) Trias SPA is a single-wafer plasma processing system designed for semiconductor manufacturing. It utilizes Tokyo Electron's Slot Plane Antenna (SPA) technology to generate high-density, low-electron-temperature plasma, enabling low-damage, low-temperature plasma treatments. This system is particularly suited for critical front-end-of-line (FEOL) applications, including gate nitridation, gate recovery oxidation, and shallow trench isolation (STI) liner oxidation.
Documents

No documents