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LAM RESEARCH / NOVELLUS INOVA NExT
    Description
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    Configuration
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    OEM Model Description
    The INOVA NExT, a 300mm metallization system designed to deposit highly conformal copper barrier-seed films at 45 nanometers and beyond. On the INOVA NExT, the single target HCM technology has been extended to the 45 nanometer node; the system also features an integrated ion-induced atomic layer deposition (iALD) module to deposit tantalum nitride (TaN) barrier films below 45 nanometers.
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    LAM RESEARCH / NOVELLUS

    INOVA NExT

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    Verified

    CATEGORY

    Deposition
    Last Verified: 2 days ago
    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    73334


    Wafer Sizes:

    12"/300mm


    Vintage:

    2013

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    LAM RESEARCH / NOVELLUS INOVA NExT
    LAM RESEARCH / NOVELLUSINOVA NExTDeposition
    Vintage: 2013Condition: Used
    Last VerifiedOver 60 days ago

    LAM RESEARCH / NOVELLUS

    INOVA NExT

    verified-listing-icon

    Verified

    CATEGORY

    Deposition
    Last Verified: 2 days ago
    listing-photo-da8ed7d3e9d44e46b23a9dcbe1bacf97-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/52814/da8ed7d3e9d44e46b23a9dcbe1bacf97/b22ffa8018374063934e21177cdd64d0_b7ce1fa46d1947d7994dd7a793ca8aad1201a_mw.jpeg
    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    73334


    Wafer Sizes:

    12"/300mm


    Vintage:

    2013


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Description
    No description
    Configuration
    No Configuration
    OEM Model Description
    The INOVA NExT, a 300mm metallization system designed to deposit highly conformal copper barrier-seed films at 45 nanometers and beyond. On the INOVA NExT, the single target HCM technology has been extended to the 45 nanometer node; the system also features an integrated ion-induced atomic layer deposition (iALD) module to deposit tantalum nitride (TaN) barrier films below 45 nanometers.
    Documents

    No documents

    Similar Listings
    View All
    LAM RESEARCH / NOVELLUS INOVA NExT
    LAM RESEARCH / NOVELLUS
    INOVA NExT
    DepositionVintage: 2013Condition: UsedLast Verified: Over 60 days ago
    LAM RESEARCH / NOVELLUS INOVA NExT
    LAM RESEARCH / NOVELLUS
    INOVA NExT
    DepositionVintage: 2013Condition: UsedLast Verified: Over 60 days ago
    LAM RESEARCH / NOVELLUS INOVA NExT
    LAM RESEARCH / NOVELLUS
    INOVA NExT
    DepositionVintage: 2013Condition: UsedLast Verified: 2 days ago