Description
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Plasma Enhanced Chemical Vapor Deposition System -PM3 Voltage:208 VOLTS Frequency:50/60 HERTZ Phase:3 Current:63 AMPS Dimensions: Standard Overall: 83 x 46 x 89 IN - 1500 LBSOEM Model Description
Plasma-Therm’s LAPECVD™ (Large Area Plasma Enhanced Chemical Vapor Deposition) uses a cassette-to-cassette configuration to allow for high-volume production in a wide range of applications. The LAPECVD™ platform can be used to deposit a variety of thin-film materials with its parallel-plate plasma deposition system. Hardware: -Cassette-to-Cassette Handling: - Multi-substrate batch processing -Dual cassettes -Platen heating up to 350°C -Upper electrode RF power at 13.56 MHz with optional MFD -Up to 8 gas channels with digital MFCs -Thermally managed reactor design—up to 175°C for internal walls and shower headDocuments
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PLASMATHERM
LAPECVD
Verified
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
62674
Wafer Sizes:
Unknown
Vintage:
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Similar Listings
View AllPLASMATHERM
LAPECVD
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
62674
Wafer Sizes:
Unknown
Vintage:
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Plasma Enhanced Chemical Vapor Deposition System -PM3 Voltage:208 VOLTS Frequency:50/60 HERTZ Phase:3 Current:63 AMPS Dimensions: Standard Overall: 83 x 46 x 89 IN - 1500 LBSOEM Model Description
Plasma-Therm’s LAPECVD™ (Large Area Plasma Enhanced Chemical Vapor Deposition) uses a cassette-to-cassette configuration to allow for high-volume production in a wide range of applications. The LAPECVD™ platform can be used to deposit a variety of thin-film materials with its parallel-plate plasma deposition system. Hardware: -Cassette-to-Cassette Handling: - Multi-substrate batch processing -Dual cassettes -Platen heating up to 350°C -Upper electrode RF power at 13.56 MHz with optional MFD -Up to 8 gas channels with digital MFCs -Thermally managed reactor design—up to 175°C for internal walls and shower headDocuments
No documents