Description

Molecular Vapor Deposition

Configuration

Vapor-Phase Monolayer Vapor Deposition System System Configuration as follows: Manual Loading / up to an 8" round substrate x 1.2" deep. (9.5" x 9.5" x 1") Typical Capacity: Can accommodate die or special devices through manual loading Chamber is 4",6",8" capatible Up to three (3) 8" wafers with a special holder Up to three (3) 6" wafers with a special holder Temperature Controlled Aluminum Chamber - Programmable by Software Roughing Valve with Slow Pumping Port Chamber Baratron Capacitance Manometer Pressure Gauge (Heated) (0-10torr) Fully Integrated Inductively Coupled Downstream Plasma Source for surface modification and cleaning Includes Gate Valve Isolation of Plasma Source Electronic Mass Flow Controller for Plasma Source gas control - Oxygen 13.56MHz Dressler RF Generator (300Watts) 3 Vapor Delivery Lines includes three (3) Temperature Controlled Vapor Delivery lines includes three (3) Capacitance Manometer Pressure Gauge includes three (3) Vapor Expansion Volumes tuned for MVD-100 configuration includes three (3) 50cc SS-316 Vials with Manual Vacuum Valves Software: Touch-Screen Control System - Fully Automatic Process Sequencing Vacuum Pump Interface (The Buyer supplies a dry pump) - 40M3H or greater pump recommended for most applications. Emergency Power-off (EMO) Switch Vented Gas Cabinet