Description

No description

Configuration

Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal baths

OEM Model Description

The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.

Documents

No documents

AIXTRON

AIX 2800 G4 HT

Verified

MOCVD

Last Verified: Over 60 days ago

Key Item Details

Condition:

Used

Operational Status:

Deinstalled

Product ID:

99356

Wafer Sizes:

Unknown

Vintage:

2010

Logistics Support

Available

Transaction Insured by Moov

Available

Refurbishment Services

Available

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