Description
No descriptionConfiguration
Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal bathsOEM Model Description
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.Documents
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AIXTRON
AIX 2800 G4 HT
Verified
CATEGORY
MOCVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Deinstalled
Product ID:
99356
Wafer Sizes:
Unknown
Vintage:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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AIXTRON
AIX 2800 G4 HT
CATEGORY
MOCVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Deinstalled
Product ID:
99356
Wafer Sizes:
Unknown
Vintage:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal bathsOEM Model Description
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.Documents
No documents