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ResistivityOEM Model Description
The SSM 5200 is an off-line metrology system that measures a variety of electrical oxide and dielectric characteristics on monitor wafers. It can measure capacitive effective thickness and equivalent oxide thickness of advanced gate dielectrics less than 1 nanometer thick with high precision. It also includes a wide range of current voltage (IV) measurements such as leakage current, TDDB, and SILC. The SSM 5200 uses a small elastic probe to form a temporary gate on the dielectric surface and an integrated pattern recognition system to locate scribe line test areas. The elastic probe has a diameter of less than 30 µm and does not damage the dielectric surface.Documents
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SSM
5200
Verified
CATEGORY
Metrology
Last Verified: 2 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
116759
Wafer Sizes:
8"/200mm
Vintage:
2008
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
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SSM
5200
CATEGORY
Metrology
Last Verified: 2 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
116759
Wafer Sizes:
8"/200mm
Vintage:
2008
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
ResistivityOEM Model Description
The SSM 5200 is an off-line metrology system that measures a variety of electrical oxide and dielectric characteristics on monitor wafers. It can measure capacitive effective thickness and equivalent oxide thickness of advanced gate dielectrics less than 1 nanometer thick with high precision. It also includes a wide range of current voltage (IV) measurements such as leakage current, TDDB, and SILC. The SSM 5200 uses a small elastic probe to form a temporary gate on the dielectric surface and an integrated pattern recognition system to locate scribe line test areas. The elastic probe has a diameter of less than 30 µm and does not damage the dielectric surface.Documents
No documents