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HITACHI HL-7000M
  • HITACHI HL-7000M
  • HITACHI HL-7000M
  • HITACHI HL-7000M
Description
E-Beam Litho
Configuration
6" RETICLE MASK LINE
OEM Model Description
Hitachi developed the electron beam mask writer HL-7000M for 90nm node reticle production. New technologies, such as a novel electron beam optical column, a 1-nm address grid and improved proximity effect correction are used in the system. It has two electrostatic deflectors, a 50-kV electron gun and a maximum beam size of 2 µm ×2 µm. It can emit up to a current density of 20 A/cm2. The writing strategy uses a variable shaped beam, vector scanning and continuous stage moving exposure. To comply with high volume data, it can accept a hierarchy data format which can effectively be compressed into a small file. The new storage area network (SAN) we adopted achieves high-speed data transfer and does not need a high-volume disc system.
Documents

No documents

CATEGORY
Lithography

Last Verified: Over 60 days ago

Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

115224


Wafer Sizes:

12"/300mm


Vintage:

2002


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

HITACHI

HL-7000M

verified-listing-icon
Verified
CATEGORY
Lithography
Last Verified: Over 60 days ago
listing-photo-abc5b9ae0acd44d9a2be3d4843d6062c-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

115224


Wafer Sizes:

12"/300mm


Vintage:

2002


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
E-Beam Litho
Configuration
6" RETICLE MASK LINE
OEM Model Description
Hitachi developed the electron beam mask writer HL-7000M for 90nm node reticle production. New technologies, such as a novel electron beam optical column, a 1-nm address grid and improved proximity effect correction are used in the system. It has two electrostatic deflectors, a 50-kV electron gun and a maximum beam size of 2 µm ×2 µm. It can emit up to a current density of 20 A/cm2. The writing strategy uses a variable shaped beam, vector scanning and continuous stage moving exposure. To comply with high volume data, it can accept a hierarchy data format which can effectively be compressed into a small file. The new storage area network (SAN) we adopted achieves high-speed data transfer and does not need a high-volume disc system.
Documents

No documents