Description

No description

Configuration

Electric source: 208V/3Ph/170A Gases: B/As/Ar Total energy: 200 KEV Throughput: 210 pieces/hour Features: -(25) Slots cassette -(4) cassettes capacity -ELS source head -(2) SUN Workstations -VME 177 cell controller -(2) SDS gas lines (ASH3 and PH3) -(2) HEWLETT-PACKARD Gas lines (BF3 and ARGON) -P-SHOWER Electron shower -Post acceleration high voltage, 80 KEV -Belt type rotary drive -Variable implant angle, 2-Axis -Real time patented dose controller -5E11~1E16 Ions/cm2 dose range -Arm Std Arm 200mm -Wafer Holder Std 200mm -Beam energy: 1 MeV -Beam Current: 1 mA -CE marked

OEM Model Description

The Eaton/Axcelis GSD 200 is a high current implanter that can handle wafers up to 8 inches in size and has a maximum energy of 180KeV. It is part of the GSD platform, which is known for being the longest manufactured and supported batch ion implanter in the industry. Ion implantation, the technology used by this machine, involves bombarding ionized species into the first atomic layers of a solid to introduce different species into a substrate. This process can change the chemical or tribological properties of the surface, such as hardness, wear resistance, resistance to chemical attack, and reduced friction. It can also improve the oxidation resistance of coatings by forming a dense Al2O3 scale. This technology is widely used in micro-electronics, optics, bio-materials, and doped semiconductor materials.