Description
No descriptionConfiguration
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The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.Documents
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APPLIED MATERIALS (AMAT)
xR80 LEAP II
Verified
CATEGORY
High Current
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
106504
Wafer Sizes:
8"/200mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
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Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
xR80 LEAP II
CATEGORY
High Current
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
106504
Wafer Sizes:
8"/200mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
No ConfigurationOEM Model Description
The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.Documents
No documents