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APPLIED MATERIALS (AMAT) xR80 LEAP II
    Description
    Already overhauled and installed , no missing part.
    Configuration
    No Configuration
    OEM Model Description
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    Documents

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    verified-listing-icon

    Verified

    CATEGORY
    High Current

    Last Verified: Over 60 days ago

    Key Item Details

    Condition:

    Used


    Operational Status:

    Deinstalled


    Product ID:

    73860


    Wafer Sizes:

    8"/200mm


    Vintage:

    2002


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Similar Listings
    View All
    APPLIED MATERIALS (AMAT) xR80 LEAP II

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    High Current
    Vintage: 2002Condition: Used
    Last VerifiedOver 60 days ago

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    verified-listing-icon
    Verified
    CATEGORY
    High Current
    Last Verified: Over 60 days ago
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    Key Item Details

    Condition:

    Used


    Operational Status:

    Deinstalled


    Product ID:

    73860


    Wafer Sizes:

    8"/200mm


    Vintage:

    2002


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Description
    Already overhauled and installed , no missing part.
    Configuration
    No Configuration
    OEM Model Description
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    Documents
    Similar Listings
    View All
    APPLIED MATERIALS (AMAT) xR80 LEAP II

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    High CurrentVintage: 2002Condition: UsedLast Verified:Over 60 days ago
    APPLIED MATERIALS (AMAT) xR80 LEAP II

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    High CurrentVintage: 0Condition: UsedLast Verified:Over 60 days ago