Description
No descriptionConfiguration
No ConfigurationOEM Model Description
ADVANTEST’s T5385 memory test system for DRAM wafer test delivers an unrivaled 768-DUT parallel test capacity and 533 Mbps capability for increased throughput and lowered cost of test. Ideal for high-volume wafer fabs, the new tester is equipped with a flexible pin configuration that supports diverse DRAM devices, allowing tester pin resources to be optimally allocated for efficiency, reduced touchdowns and improved throughput. Achieving improved efficiency per device while scaling even higher in parallelism, the T5385 also delivers Known Good Die (KGD) for consumer devices, to greatly improve yields for LPDDR2 and DDR3 multi-die and stacked devices.Documents
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ADVANTEST
T5385
Verified
CATEGORY
Final Test
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
92695
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
ADVANTEST
T5385
CATEGORY
Final Test
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
92695
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
No ConfigurationOEM Model Description
ADVANTEST’s T5385 memory test system for DRAM wafer test delivers an unrivaled 768-DUT parallel test capacity and 533 Mbps capability for increased throughput and lowered cost of test. Ideal for high-volume wafer fabs, the new tester is equipped with a flexible pin configuration that supports diverse DRAM devices, allowing tester pin resources to be optimally allocated for efficiency, reduced touchdowns and improved throughput. Achieving improved efficiency per device while scaling even higher in parallelism, the T5385 also delivers Known Good Die (KGD) for consumer devices, to greatly improve yields for LPDDR2 and DDR3 multi-die and stacked devices.Documents
No documents