Description
• With Process gases BCb. Clz. SiCl4. CF4, SFo, C4Fs. 02. & Ar. this versatile ICP etcher is designed to etch GaN. Sapphire. metals. ITO, SiC . AlN. ZnO and others • Patented ICP with magnetic confinement (called ISM) provides higher plasma density at lower pressure improves etch rate. uniformity and anisotropy. • The patented star cathode distributes power evenly enhancing uniformity. • System automatically loads (3) 6 inch wafers from the cassette to the carrier. • The carrier is clamped to the cathode which is temperature controlled via a heat exchange. The individual wafers are cooled with backside Helium. • UL and transfer chamber share an Ebara roughing pump. The process chamber uses an Ebara roughing pump and a 1000 Vs turbo.Configuration
No ConfigurationOEM Model Description
None ProvidedDocuments
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ULVAC
NE-950
CATEGORY
Dry / Plasma Etch
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
135818
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
• With Process gases BCb. Clz. SiCl4. CF4, SFo, C4Fs. 02. & Ar. this versatile ICP etcher is designed to etch GaN. Sapphire. metals. ITO, SiC . AlN. ZnO and others • Patented ICP with magnetic confinement (called ISM) provides higher plasma density at lower pressure improves etch rate. uniformity and anisotropy. • The patented star cathode distributes power evenly enhancing uniformity. • System automatically loads (3) 6 inch wafers from the cassette to the carrier. • The carrier is clamped to the cathode which is temperature controlled via a heat exchange. The individual wafers are cooled with backside Helium. • UL and transfer chamber share an Ebara roughing pump. The process chamber uses an Ebara roughing pump and a 1000 Vs turbo.Configuration
No ConfigurationOEM Model Description
None ProvidedDocuments
No documents