ULVAC

NE-950

Host console- 125*300*210 cm/1500	 
NameplateNE-950	 
Auxiliary machine-  chiller(40*100*100 cm/100kg )	 
                                 pump(38*100*55 cm/100kg )	 
                                 pump(38*100*55 cm/100kg )


Machine condition- Damaged, no missing parts	 
Damage description- The Turbo pump is severely damaged and cannot be repaired, and the vacuum transfer arm is damaged.	 
Whether there are high and low frequencies-  YES Upper electrode: 13.56MHz Lower electrode: 12.5MHz	 
Gas type- Ar, O2, N2, CF4, Cl2, BCl3	 
Current- Three-phase five-wire 208V/120A


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• With Process gases BCb. Clz. SiCl4. CF4, SFo, C4Fs. 02. & Ar. this versatile ICP etcher is
designed to etch GaN. Sapphire. metals. ITO, SiC . AlN. ZnO and others
• Patented ICP with magnetic confinement (called ISM) provides higher plasma density
at lower pressure improves etch rate. uniformity and anisotropy.
• The patented star cathode distributes power evenly enhancing uniformity.
• System automatically loads (3) 6 inch wafers from the cassette to the carrier.
• The carrier is clamped to the cathode which is temperature controlled via a heat
exchange. The individual wafers are cooled with backside Helium.
• UL and transfer chamber share an Ebara roughing pump. The process chamber
uses an Ebara roughing pump and a 1000 Vs turbo.

NE-950

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