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Description
Dry Etcher Parts included:- -Main body. -SMIF Loader -Controller -CRT -Keyboard -Through the wall config. -SUS Front panel -Al Side panel: Ni Coated -Pump interface Gas system: (5) MFC Tylan FC-2900 CF4, C12, N2, 02, NF3 Quartz tube protection C mictube ESC Universal chuck, 8" Water auxiliaries This isotropic etching system applicable to wafers of diameter 75 mm to 300 mm has been favoured by customers for many years. While having many achievements for round etching including Si and SiO2, recently this system has also been used for the improvement of device properties by using its remote plasma feature. Its plasma damage-free technology contributes to the designing of high-quality devices. Features ・Isotropic etching By generating plasma outside of the chamber and performing the etching processing with radical compounds only, this system is capable of perfect isotropic etching processing. This system is applied for round processing for trench pattern opening sections. ・Plasma damage-free feature Due to the long distance from a plasma to a wafer, the ion generated within the plasma is deactivated and does not impact the wafer. This feature is applied to removal of damaged layers after RIE processing.Configuration
No ConfigurationOEM Model Description
None ProvidedDocuments
No documents
Key Item Details
Condition:
Used
Operational Status:
Deinstalled
Product ID:
114735
Wafer Sizes:
8"/200mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SHIBAURA
CDE 80
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Deinstalled
Product ID:
114735
Wafer Sizes:
8"/200mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Dry Etcher Parts included:- -Main body. -SMIF Loader -Controller -CRT -Keyboard -Through the wall config. -SUS Front panel -Al Side panel: Ni Coated -Pump interface Gas system: (5) MFC Tylan FC-2900 CF4, C12, N2, 02, NF3 Quartz tube protection C mictube ESC Universal chuck, 8" Water auxiliaries This isotropic etching system applicable to wafers of diameter 75 mm to 300 mm has been favoured by customers for many years. While having many achievements for round etching including Si and SiO2, recently this system has also been used for the improvement of device properties by using its remote plasma feature. Its plasma damage-free technology contributes to the designing of high-quality devices. Features ・Isotropic etching By generating plasma outside of the chamber and performing the etching processing with radical compounds only, this system is capable of perfect isotropic etching processing. This system is applied for round processing for trench pattern opening sections. ・Plasma damage-free feature Due to the long distance from a plasma to a wafer, the ion generated within the plasma is deactivated and does not impact the wafer. This feature is applied to removal of damaged layers after RIE processing.Configuration
No ConfigurationOEM Model Description
None ProvidedDocuments
No documents