Description
Polysilicon EtchConfiguration
<p>Tool is operating in clean room.</p><p>Labelled as Collateral Asset.</p><p> </p><p>[Chamber A]</p><p>Chamber type:AdvantEdge G2</p><p>Gas config.(sccm)=MFC full scale</p><p>HBR(400）/CL2(50)/CL2(400)/O2(10)/</p><p>O2(100)/HE(400)/N2(200)/SF6(200)/</p><p>CF4(200)/Ar(400)</p><p> Source 13.56MHz, max 3000 W</p><p>Bias 13.56MHz Hz, max 1500 W</p><p>Lid Temp Control ~95℃</p><p>ESC Temp Control ~85℃</p><p> </p><p>[Chamber B]</p><p>Chamber type:AdvantEdge G2</p><p>Gas config.(sccm)=MFC full scale</p><p>HBR(400）/CL2(50)/CL2(400)/O2(10)/</p><p>O2(100)/HE(400)/N2(200)/SF6(200)/</p><p>CF4(200)/Ar(400)</p><p> Source 13.56MHz, max 3000 W</p><p>Bias 13.56MHz Hz, max 1500 W</p><p>Lid Temp Control ~95℃</p><p>ESC Temp Control ~85℃</p><p> </p><p>Pictures will be collected.</p><p>Missing or damaged parts: Not reported.</p>OEM Model Description
The Centura and Centura AP mainframe single-wafer, multi-chamber architectures enable integrated, sequential wafer processing in up to four process chambers for 150mm, 200mm, and 300mm wafers.Documents
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APPLIED MATERIALS (AMAT)
CENTURA AP
Verified
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
20022
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
CENTURA AP
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
20022
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Polysilicon EtchConfiguration
<p>Tool is operating in clean room.</p><p>Labelled as Collateral Asset.</p><p> </p><p>[Chamber A]</p><p>Chamber type:AdvantEdge G2</p><p>Gas config.(sccm)=MFC full scale</p><p>HBR(400）/CL2(50)/CL2(400)/O2(10)/</p><p>O2(100)/HE(400)/N2(200)/SF6(200)/</p><p>CF4(200)/Ar(400)</p><p> Source 13.56MHz, max 3000 W</p><p>Bias 13.56MHz Hz, max 1500 W</p><p>Lid Temp Control ~95℃</p><p>ESC Temp Control ~85℃</p><p> </p><p>[Chamber B]</p><p>Chamber type:AdvantEdge G2</p><p>Gas config.(sccm)=MFC full scale</p><p>HBR(400）/CL2(50)/CL2(400)/O2(10)/</p><p>O2(100)/HE(400)/N2(200)/SF6(200)/</p><p>CF4(200)/Ar(400)</p><p> Source 13.56MHz, max 3000 W</p><p>Bias 13.56MHz Hz, max 1500 W</p><p>Lid Temp Control ~95℃</p><p>ESC Temp Control ~85℃</p><p> </p><p>Pictures will be collected.</p><p>Missing or damaged parts: Not reported.</p>OEM Model Description
The Centura and Centura AP mainframe single-wafer, multi-chamber architectures enable integrated, sequential wafer processing in up to four process chambers for 150mm, 200mm, and 300mm wafers.Documents
No documents