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APPLIED MATERIALS (AMAT) AMP 3300
  • APPLIED MATERIALS (AMAT) AMP 3300
  • APPLIED MATERIALS (AMAT) AMP 3300
  • APPLIED MATERIALS (AMAT) AMP 3300
Description
FTG HOSE CONN 1/2H X 1/2MNPT SST
Configuration
No Configuration
OEM Model Description
AMP 3300 PLASMA DEPOSITION SYSTEMS Superior film qualities, both nitride and oxide, guaranteed uniformities, and proven reliability have made the AMP 3300 popular for a wide range of plasma passivation and interlayer applications. Recent process developments have led to an improved method of gas distribution employing a perforated electrode. This provides for uniform gas composition across the entire wafer platen, resulting in consistent film characteristics on every wafer.
Documents

No documents

CATEGORY
CVD

Last Verified: Over 60 days ago

Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

109312


Wafer Sizes:

Unknown


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

APPLIED MATERIALS (AMAT)

AMP 3300

verified-listing-icon
Verified
CATEGORY
CVD
Last Verified: Over 60 days ago
listing-photo-efacd524bff6411c978bd618cbb2fb6e-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

109312


Wafer Sizes:

Unknown


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
FTG HOSE CONN 1/2H X 1/2MNPT SST
Configuration
No Configuration
OEM Model Description
AMP 3300 PLASMA DEPOSITION SYSTEMS Superior film qualities, both nitride and oxide, guaranteed uniformities, and proven reliability have made the AMP 3300 popular for a wide range of plasma passivation and interlayer applications. Recent process developments have led to an improved method of gas distribution employing a perforated electrode. This provides for uniform gas composition across the entire wafer platen, resulting in consistent film characteristics on every wafer.
Documents

No documents