Description
Dielectric CMPConfiguration
OxideOEM Model Description
The integrated post-CMP Desica® cleaner uses unique full-immersion Marangoni® vapor drying technology to virtually eliminate watermark defects and dramatically reduce particle contamination. The wafer is so clean after CMP (<100 45nm defects on a 300mm wafer) that compared to the entire surface area of the earth, the remaining contaminants would cover only 0.3 acres, the size of a medium sized suburban garden The Applied Reflexion LK CMP system also implements a full suite of endpoint methods, in-line metrology and advanced process control capabilities that ensure excellent within-wafer and wafer-to-wafer process control and repeatability for all planarization applications. Its patented window-in-pad technology enables accurate real-time polish control of every wafer without compromising throughput. The new FullVision™ in-situ endpoint system, for all stop-in and stop-on dielectric applications, uses broadband spectroscopy to significantly improve Cpk and minimize wafer scrap caused by drifts in consumable sets and incoming wafer variations.Documents
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APPLIED MATERIALS (AMAT)
REFLEXION LK
Verified
CATEGORY
CMP
Last Verified: 19 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
113827
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
REFLEXION LK
CATEGORY
CMP
Last Verified: 19 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
113827
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Dielectric CMPConfiguration
OxideOEM Model Description
The integrated post-CMP Desica® cleaner uses unique full-immersion Marangoni® vapor drying technology to virtually eliminate watermark defects and dramatically reduce particle contamination. The wafer is so clean after CMP (<100 45nm defects on a 300mm wafer) that compared to the entire surface area of the earth, the remaining contaminants would cover only 0.3 acres, the size of a medium sized suburban garden The Applied Reflexion LK CMP system also implements a full suite of endpoint methods, in-line metrology and advanced process control capabilities that ensure excellent within-wafer and wafer-to-wafer process control and repeatability for all planarization applications. Its patented window-in-pad technology enables accurate real-time polish control of every wafer without compromising throughput. The new FullVision™ in-situ endpoint system, for all stop-in and stop-on dielectric applications, uses broadband spectroscopy to significantly improve Cpk and minimize wafer scrap caused by drifts in consumable sets and incoming wafer variations.Documents
No documents