Description

- 4" Fixture Gen I (looks like new / hardly used) - System is currently set up for 4" wafers but is capable of 4"-6" wafer size - Variant Turbo Pump for Vacuum - Pressure Plate with center pin for Anodic Bonding (not installed but with the tool) - 4" Closed Pressure Plate (no holes) for applying temperature and pressure. This type of plate is used for temperature compressed bonding. - Heater Controller System - Power Supply for negative high voltage -2000V and 15 mA - Up to 20kN Bond Force - HDD included - PC is complete - Windows 2000 - Monitor - Mouse - Operations Manual - Screws are missing from heater contoller unit and PC so previous user may have taken components out for troubleshooting - tool pressure gauge button missing - Overpressure Control - Overall, good condition tool that looks like it was not used frequently - ACP40G Oil Pump included and hooked to the tool.

Configuration

No Configuration

OEM Model Description

The SB8e and the SB6e (SB8e/6e) represent the latest generation technology in substrate bonders offering precision performance and flexibility in a user-friendly, high-quality package. The newly designed and enhanced SB8e/6e are semi-automatic, computer-controlled systems with both vacuum- and pressurecontrolled atmosphere capability featuring an ergonomic load/ unload station. The SB8e/6e delivers superior post bond alignment accuracy resulting from precision mechanics, uniform force capability and leading temperature control. When matched with SUSS’ bond aligners, BA8/6, they offer enabling capability for MEMS, 3-D interconnects, and opto-electronics. This generation’s bond chamber and tooling supports all types of bond processes with optimization especially for thermocompression bonding and the flexibility to switch to anodic bond tooling. The flexibility of these bond systems make them ideal and economical for laboratories and small series production. Yet, combined with SUSS’ patent-pending low temperature plasma activation module these systems offer enabling technology for fusion bonding of SOI, III/V, and SiGe compounds at temperatures down to 200°C.