Plasma-Therm is a global manufacturer of plasma etch, deposition, and advanced packaging equipment for the specialty semiconductor and nanotechnology markets.

PLASMATHERM

**PARTS**

PINNACLE

Gen 3

SLR-7701 ICP

The Vision 320 RIE provides etch capability for R&D, prototyping, and low volume production. This parallel-plate capacitance based systems is found in applications that include fundamental material studies, surface modification, semiconductor device fabrication, and failure analysis involving delayering. 

This system, found in both academic and industrial environments, is a result of their small footprint along with robust construction that focuses on ease of use and low maintenance. The Vision systems satisfy the high reliability requirements for critical applications such as delayering where production is dependent on constant input from the Failure Analysis department. Being outside of the fabrication process, means that the system must have turnkey operation for non-etch process oriented engineers.

Vision 320

Apex SLR: ICP-Etch
-Ideal for small volume production and R&D. Small footprint design
-Load lock method, manual load specification
-Adopts 2MHz ICP source. Improved etching rate and uniformity with high-density plasma
-ICP source section can be opened and closed 90 degrees for easy access to the lower electrode, and equipped with a slide mechanism for easy turbo pump replacement.
-Independent control of plasma density and bias possible
-Compatible with chlorine-based etching applications
-Compatible with various end point detection methods

APEX SLR

Batchtop VII 

VERSALOCK

7000

DSB-6000

DBS 6000

The Vision 420 RIE provides etching capabilities over a variety of materials and substrates for non-caustic etching (primarily Fluorine based). The small footprint, low cost, ease of use and superior performance makes the Vision 420 an ideal candidate for a wide range of uniform, high quality films serving R&D, prototyping, pilot line and low volume production. The high volume loading allows production for numerous applications such as LED, MEMs, and wireless manufacturing

The 420 is found in production lines, universities and R&D labs worldwide. The reliable hardware and easy to use CORTEX® operating software makes the Vision 420 ideal for researchers and production alike. The extensive experience and large process library enable the users to ‘hit the ground running’ for any RIE etching requirement.

Vision 420

VRL 700

SLR-730	

Corial D500

Heatpulse

CLR 7000

The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.

SLR 720

VERSALINE system models are configured to perform an array of etch and deposition processes. Ion beam technology suits a range of applications, from low, controllable damage etching to high-rate, high-aspect-ratio, deep silicon etching to difficult materials. The systems support process control through EndpointWorks®. Enhancements include data logging, automated maintenance scheduler (AMS), and SECS/GEM. Our Cortex® control system provides a stable, user-friendly control interface designed for efficiency and productivity. The VERSALINE platform’s modular design allows for flexible configuration of substrate handling for a variety of handling options, from R&D single wafer or carrier loading with a loadlock to high-volume, multi-chamber production clusters. Clear upgrade paths that leverage costs and process development make future planning easy. 

VERSALINE CVD

WAFER/BATCH 740

SLR-770 ICP

"The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components.
The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."

VERSALINE ICP	

Plasma-Therm’s LAPECVD™ (Large Area Plasma Enhanced Chemical Vapor Deposition) uses a cassette-to-cassette configuration to allow for high-volume production in a wide range of applications.

The LAPECVD™ platform can be used to deposit a variety of thin-film materials with its parallel-plate plasma deposition system.

Hardware:
-Cassette-to-Cassette Handling:
     - Multi-substrate batch processing
-Dual cassettes
-Platen heating up to 350°C
-Upper electrode RF power at 13.56 MHz with optional MFD
-Up to 8 gas channels with digital MFCs
-Thermally managed reactor design—up to 175°C for internal walls and shower head

LAPECVD

Plasma Enhanced Chemical Vapor Deposition System

Vision 310

SLR 740	

VERSALINE ETCH

VERSALOCK RIE	

SLR 770

VERSALINE PECVD systems can deposit many different high-quality films, ensuring you get maximum, reliable high productivity at a low total cost of ownership. 

Process
Silane-based films (a-Si, SiO2, SiNx, SiON, SiC, SiOF, a-SiC)
TEOS films
Stress control
High and low deposition rates
Tunable refractive index

VERSALINE PECVD

GEN 4 

7300

SL 730	

Utilizes a high-density ICP plasma with a temperature-controlled and biased substrate.

- Archived/ merged to PlasmaTherm Versaline CVD - 3/21/24: MQ per requested by Jeff

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