Description
SUNALE R-150 standard ALD system with four separate inlets for precursor sources. Maximum deposition temperature for the ALD reactor is 500C RC-150 reaction chamber with KF/CF connection flanges SH-150 sample holder for maximum 6" wafer Touch panel PC and elctronics for operating the ALD reactor with multi-source ALD software Precursor sources for handling solid, liquid, and gas precursors Picosolution source system: Cooled source system for high vapor pressure liquid precursors(eg. TMA, DEZ, TiCl4, and H2O) Picosolution Booster source system: heated source- up to 200C for ultra-low pressure metal precursors (eg. for TEMAHf, TEMAZr) POCA-150 powder coater chamber: Flow thru static bed cartridge assembly for coating powder substrate materials Edwards E2M80 2 stage 57CFM vacuum pump serial no. 1517D57R05362 Power: 230v, 3 phaseConfiguration
SUNALE™ R-150 Standard ALD System The ALD reactor has four separate inlets for precursor sources. It can accommodate up to five precursor sources. Maximum deposition temperature of the ALD reactor is 500 C.OEM Model Description
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PICOSUN
SUNALE R-150
Verified
CATEGORY
ALD
Last Verified: 8 days ago
Key Item Details
Condition:
Used
Operational Status:
Deinstalled / Uncrated
Product ID:
116613
Wafer Sizes:
6"/150mm
Vintage:
2014
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
PICOSUN
SUNALE R-150
CATEGORY
ALD
Last Verified: 8 days ago
Key Item Details
Condition:
Used
Operational Status:
Deinstalled / Uncrated
Product ID:
116613
Wafer Sizes:
6"/150mm
Vintage:
2014
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
SUNALE R-150 standard ALD system with four separate inlets for precursor sources. Maximum deposition temperature for the ALD reactor is 500C RC-150 reaction chamber with KF/CF connection flanges SH-150 sample holder for maximum 6" wafer Touch panel PC and elctronics for operating the ALD reactor with multi-source ALD software Precursor sources for handling solid, liquid, and gas precursors Picosolution source system: Cooled source system for high vapor pressure liquid precursors(eg. TMA, DEZ, TiCl4, and H2O) Picosolution Booster source system: heated source- up to 200C for ultra-low pressure metal precursors (eg. for TEMAHf, TEMAZr) POCA-150 powder coater chamber: Flow thru static bed cartridge assembly for coating powder substrate materials Edwards E2M80 2 stage 57CFM vacuum pump serial no. 1517D57R05362 Power: 230v, 3 phaseConfiguration
SUNALE™ R-150 Standard ALD System The ALD reactor has four separate inlets for precursor sources. It can accommodate up to five precursor sources. Maximum deposition temperature of the ALD reactor is 500 C.OEM Model Description
None ProvidedDocuments
No documents