Description
Scanning Electron Microscope (SEM)Configuration
Electron source: Cold-cathode field emission Accelerating voltage: 0.5-30 kV, in 0.1 kV steps Magnification: 20×-800,000× Beam current range: 1 pA-2 nA Standard detectors: SE / BE, E×B combined detector Imaging modes: Secondary-electron morphology / Backscattered-electron atomic-number contrast Beam deceleration: Yes Secondary-electron resolution: 1.0 nm at 15 kV, 4 mm working distance 2.0 nm at 1 kV, 1.5 mm working distance, normal mode 1.4 nm at 1 kV, 1.5 mm working distance, beam-deceleration mode Specimen stage - Five-axis motorized: X travel: 0-50 mm Y travel: 0-50 mm Z travel: 1.5-30 mm Tilt: -5° to +70° Rotation: Continuous 360° Maximum specimen diameter: 100 mm Vacuum: Specimen chamber: 7 × 10⁻⁴ Pa Electron-gun chamber: 1 × 10⁻⁷ PaOEM Model Description
The S-4800 is an advanced Field Emission Scanning Electron Microscope (FE-SEM) that builds upon the proven performance of its predecessors, the S-4700 and S-5200. With beam deceleration technology, it achieves an impressive resolution of 1.4 nm at 1 kV and 1.0 nm at 15 kV. The microscope features a semi-in-lens detector design, allowing for the examination of large samples without compromising ultra-high resolution at low accelerating voltages. The innovative objective lens design incorporates Hitachi's Super ExB filter technology, which effectively separates pure secondary electrons (SE), compositional SE, and backscattered electron (BSE) signals. With a specimen diameter of 200 mm and a 5-axis motorized eucentric stage, it offers exceptional sample accommodation and positioning capabilities. The S-4800 is compatible with optional accessories such as Energy Dispersive X-ray Spectrometer (EDX) and Electron Backscatterted Diffraction Pattern (EBDP) systems, making it suitable for a range of ultra-high resolution applications in fields like semiconductor research, materials studies, and nanotechnology.Documents
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HITACHI
S-4800
CATEGORY
SEM / FIB
Last Verified: Yesterday
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
154501
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Scanning Electron Microscope (SEM)Configuration
Electron source: Cold-cathode field emission Accelerating voltage: 0.5-30 kV, in 0.1 kV steps Magnification: 20×-800,000× Beam current range: 1 pA-2 nA Standard detectors: SE / BE, E×B combined detector Imaging modes: Secondary-electron morphology / Backscattered-electron atomic-number contrast Beam deceleration: Yes Secondary-electron resolution: 1.0 nm at 15 kV, 4 mm working distance 2.0 nm at 1 kV, 1.5 mm working distance, normal mode 1.4 nm at 1 kV, 1.5 mm working distance, beam-deceleration mode Specimen stage - Five-axis motorized: X travel: 0-50 mm Y travel: 0-50 mm Z travel: 1.5-30 mm Tilt: -5° to +70° Rotation: Continuous 360° Maximum specimen diameter: 100 mm Vacuum: Specimen chamber: 7 × 10⁻⁴ Pa Electron-gun chamber: 1 × 10⁻⁷ PaOEM Model Description
The S-4800 is an advanced Field Emission Scanning Electron Microscope (FE-SEM) that builds upon the proven performance of its predecessors, the S-4700 and S-5200. With beam deceleration technology, it achieves an impressive resolution of 1.4 nm at 1 kV and 1.0 nm at 15 kV. The microscope features a semi-in-lens detector design, allowing for the examination of large samples without compromising ultra-high resolution at low accelerating voltages. The innovative objective lens design incorporates Hitachi's Super ExB filter technology, which effectively separates pure secondary electrons (SE), compositional SE, and backscattered electron (BSE) signals. With a specimen diameter of 200 mm and a 5-axis motorized eucentric stage, it offers exceptional sample accommodation and positioning capabilities. The S-4800 is compatible with optional accessories such as Energy Dispersive X-ray Spectrometer (EDX) and Electron Backscatterted Diffraction Pattern (EBDP) systems, making it suitable for a range of ultra-high resolution applications in fields like semiconductor research, materials studies, and nanotechnology.Documents
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