The 2300 Versys Kiyo45 is a Reactive Ion Etch (RIE) system from Lam Research, part of the Kiyo Product Family. It is used to shape the electrically active materials of a semiconductor device with high precision and consistency. The Kiyo product family is known for its high-performance capabilities and productivity. The Versys Kiyo45 is used for various applications, including shallow trench isolation, source/drain engineering, high-k/metal gate, FinFET and tri-gate, and multi-patterning. It enables processing at sub-65 nm technology nodes.

LAM RESEARCH CORPORATION

2300 VERSYS KIYO45

The TCP 9400SE is a high density, low pressure etch system from Lam’s TCP product line. It incorporates the Company’s patented Transformer Coupled Plasma source technology for etching 0.35 micron and smaller geometries. The TCP 9400SE is used for polysilicon and polycide etch applications. It operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates with independent power control to the lower electrode, which improves etch results across a wider process window. Lam’s TCP systems are designed to offer customers a reliable, lower cost of ownership solution to their advanced needs. The TCP systems are available as stand-alone, single wafer tools, or on the Alliance multichamber cluster platform.

TCP 9400SE

TCP 9400 is part of Lam’s TCP product line of high-density, low-pressure systems that were introduced in late 1992. It incorporates the Company’s patented Transformer Coupled Plasma source technology for etching 0.35 micron and smaller geometries. The TCP 9400 series is designed for polysilicon and polycide etch applications and is used to produce a broad range of advanced logic and memory devices. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates, with independent power control to the lower electrode, which improves etch results across a wider process window. The TCP system is designed to offer customers a reliable, lower cost of ownership solution to their advanced needs.

TCP 9400

The TCP 9600SE is a high density, low pressure etch system from Lam’s TCP product line. It incorporates the Company’s patented Transformer Coupled Plasma source technology for etching 0.35 micron and smaller geometries. It is used for metal etch applications and is designed to offer customers a reliable, lower cost of ownership solution to their advanced needs. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. It is available as a stand-alone, single wafer tool, or on the Alliance multichamber cluster platform.

TCP 9600SE

The 2300 Versys Kiyo is a manufacturing tool designed for 65 nm and beyond. It provides excellent uniformity and defect control on a reliable wafer transport system. The symmetric chamber and radial tuning features produce uniform etch results for advanced devices. It employs proprietary technology for process repeatability, low defect, and metal contamination results. It supports conventional applications such as gate and shallow trench isolation (STI) and emerging applications such as high k dielectric removal, critical spacer etch, and lithography-enabling etch steps. The system can be upgraded from the 2300 Versys Star, providing an investment-extending strategy.

2300 VERSYS KIYO

The Kiyo C series is part of Lam’s Kiyo product family, which delivers high-performance capabilities for conductor etching in semiconductor devices. Conductor etching is a crucial process that shapes the electrically active materials in a semiconductor device, and even slight variations can impact device performance. The Kiyo C series offers superior uniformity and repeatability, enabled by a symmetrical chamber design, industry-leading electrostatic chuck technology, and independent process tuning features. It also provides high productivity with low defectivity on multi-film stacks, thanks to its in-situ etch capability, continuous plasma, and advanced waferless auto-clean technology. Additionally, the Kiyo C series is upgradable, providing a low cost of ownership over several device generations.

2300 KIYO C

TCP 9600 is a high-density, low-pressure system from Lam’s TCP product line. It was introduced in late 1992 and incorporates the Company’s patented Transformer Coupled Plasma-TM- source technology for etching 0.35 micron and smaller geometries. The TCP 9600 series is designed for metal etch applications and is used to produce a broad range of advanced logic and memory devices. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates, with independent power control to the lower electrode. This improves etch results across a wider process window and offers customers a reliable, lower cost of ownership solution to their advanced needs.

TCP 9600

The 2300 Versys is a part of Lam’s 2300 etch series, which is a low-risk solution for sub-100-nm volume production on 300-mm substrates. It has a compact design that reduces floor space while providing full service access. The Versys conductor etch systems rely on Lam’s Transformer Coupled Plasma™ source and deliver superior performance. It also reduces cost of ownership to compete with the lowest cost systems in the industry.

2300 VERSYS

 Lam's TCP product line of high-density, low-pressure etch systems, which was introduced in late 1992, incorporates the Company's patented Transformer Coupled Plasma source technology for etching 0.25 micron and smaller geometries. The Company currently offers the TCP 9600SEII and TCP 9600PTX for metal etch applications, the TCP 9400SEII and TCP 9400PTX for polysilicon, polycide and shallow trench isolation etch applications and the TCP 9100 and TCP 9100PTX for oxide etch applications.

TCP 9100PTX

The TCP 9400DSiE is a deep silicon etch system designed for high-volume production. It offers broad process capability and flexibility for MEMS, advanced packaging, and power semiconductor applications. The system is based on Lam’s TCP 9400 Etch Series and features a patented TCP plasma source for uniform ion flux and high cross-wafer uniformity. Lam’s Waferless AutoClean technology maintains a consistent chamber environment for superior process stability. With over 1,300 chambers installed worldwide, the TCP 9400DSiE is a reliable choice for meeting the challenges of Si DRIE.

TCP 9400DSiE

The TCP 9400PTX is a high-density, low-pressure etch system from Lam Research’s TCP product line. It incorporates the company’s patented Transformer Coupled Plasma source technology for etching 0.25 micron and smaller geometries. The system is designed for polysilicon, polycide, and shallow trench isolation etch applications. It operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. Independent power control to the lower electrode improves etch results across a wider process window. The TCP 9400PTX is designed to offer customers a reliable, lower cost of ownership solution for their advanced processing needs and is available as a stand-alone, single wafer configuration or in conjunction with the Alliance multi-chamber cluster platform.

TCP 9400PTX

Lam’s TCP 9400DFM is an advanced silicon etch system for 200mm wafers, designed to meet gate and STI etch requirements down to the 130nm technology node. It is capable of running multiple applications in situ, increasing process flexibility, reliability, and productivity. The system features SymFlo™, a symmetrical flow gas distribution system, and Voltage Control Interface™ (VCI™), a closed-loop system that enhances chamber matching capabilities. It also incorporates Lam’s unique Waferless Auto Clean™ (WAC™) technology, which offers world-class mean time between cleans (MTBC). An optional interferometric endpoint system provides repeatable endpoint capability. The TCP 9400DFM offers upgrade capability for Lam’s highly successful TCP 9400PTX.

TCP 9400DFM

The 2300 Versys HP addresses metal etch requirements for the 90 nm node and beyond.

2300 VERSYS HP

2300 VERSYS METAL

Lam’s 2300 Versys Star silicon etch system is designed to meet the challenging needs of sub-90-nm technologies. It delivers superior performance on complex film stacks and meets the requirements for next-generation silicon etch processes to sub-65 nm. The system provides excellent CD bias uniformity, enabled by the industry’s first technologies for tuning gas flows and wafer temperature with step-by-step settings. This allows flexibility in designing the process across the wafer and between steps, leading to a larger process window that can accommodate an extensive variety of applications, wafer types, and film types. The 2300 Versys Star is available as an upgrade to existing 2300 Versys systems.

2300 VERSYS STAR

The 2300 Syndion, which also employs TCP technology, addresses 3-D IC through-silicon via (TSV) etch applications. TSVs provide the interconnects for die-to-die and wafer-to-wafer stacking, eliminating wire bonding to increase device packing density (smaller form factor) and improve performance (higher process speed and lower power requirements). Important for TSV applications, the Syndion’s TCP-based technology enables sequential processing the same chamber while ensuring etch rate uniformity and profile symmetry to prevent tilting. The technology also supports clean mode operation and provides bias voltage control for process repeatability.

2300 SYNDION

2300 VERSYS KIYO3X

2300 METAL 45

The Transformer-Coupled Plasma (TCP) 9100 system is a high-density oxide-etch system announced by Lam Research Corp. It is designed to meet the full spectrum of requirements in oxide-etch processing and manufacturing for advanced microprocessor and memory devices. The TCP 9100 is the industry’s first tool that combines high throughput with high etch rates and advanced process performance, while etching devices in the deep submicron regime, with minimum feature sizes of less than 0.35 micron. It responds to chipmakers’ need for an oxide-etch method that can meet their dual requirements for 0.25-micron processing capability and consistent production performance. The TCP 9100 system is a multichamber cluster tool on Lam’s Advanced Capability Alliance platform, capable of supporting up to four process chambers.

TCP 9100

The 2300 Versys Metal45 addresses backend metal etch uniformity and throughput needs for memory customers at 70 nm and beyond as well as metal hard mask applications for logic customers at 45 nm and beyond. 

2300 VERSYS METAL45

The 2300 Kiyo F is part of Lam’s Kiyo product family, which delivers high-performance capabilities for conductor etching in semiconductor devices. Conductor etch helps shape the electrically active materials used in the parts of a semiconductor device, and even a slight variation in these miniature structures can impact device performance. The Kiyo F series offers superior uniformity and repeatability, high productivity with low defectivity on multi-film stacks, improved critical dimension uniformity, atomic-scale variability control with production-worthy throughput, and upgradability for low cost of ownership over several device generations.

2300 KIYO F

the Company's patented Transformer Coupled Plasma source technology for etching 0.25 micron and smaller geometries. The TCP 9600SEII and TCP 9600PTX for metal etch applications.

TCP 9600SEII

TCP 9600CFE

2300 KIYO MCX

The TCP 9400SEII is a high-density, low-pressure etch system from Lam Research’s TCP product line. It was introduced in late 1992 and incorporates the company’s patented Transformer Coupled Plasma source technology for etching 0.25 micron and smaller geometries. The system is designed for polysilicon, polycide, and shallow trench isolation etch applications. It operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. Independent power control to the lower electrode improves etch results across a wider process window. The TCP 9400SEII is designed to offer customers a reliable, lower cost of ownership solution for their advanced processing needs and is available as a stand-alone, single wafer configuration or in conjunction with the Alliance multi-chamber cluster platform.

TCP 9400SEII 

2300 VERSYS METAL M

2300 VERSYS W

The TCP 9400DSiE II is part of the TCP 9400DSiE product family, which is based on the production-proven TCP 9400 silicon etch series. The system features a patented high-density TCP plasma source that provides a configuration to meet the challenges of silicon deep reactive ion etch. This offers broad process capability and flexibility for a wide range of applications, including MEMS, advanced packaging, power semiconductors, and TSV applications on 150 mm and 200 mm wafers. Additionally, the system incorporates proprietary in situ chamber cleaning technology to provide etch rate stability.

TCP 9400DSiE II

The TCP 9600PTX is a high-density, low-pressure etch system from Lam Research’s TCP product line. It incorporates the company’s patented Transformer Coupled Plasma source technology for etching 0.25 micron and smaller geometries. It is used for metal etch applications and is designed to offer customers a reliable, lower cost of ownership solution for their advanced processing needs. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. It is available as a stand-alone, single wafer configuration or in conjunction with the Alliance multi-chamber cluster platform.

TCP 9600PTX

The 2300 Kiyo E is part of Lam’s Kiyo product family, which delivers high-performance capabilities to precisely and consistently form conductive features with high productivity. The Kiyo E series is designed to address the challenges of the semiconductor industry, such as processing smaller features, new materials, and new transistor structures on the wafer. It offers superior uniformity and repeatability, enabled by a symmetrical chamber design, industry-leading electrostatic chuck technology, and independent process tuning features. Additionally, it has high productivity with low defectivity on multi-film stacks, enabled by in-situ etch capability, continuous plasma, and advanced waferless auto-clean technology. The Kiyo E series also offers improved critical dimension uniformity using proprietary Hydra technology that corrects for incoming patterning variability and atomic-scale variability control with production-worthy throughput enabled by plasma-enhanced ALE capability. The product is upgradable for low cost of ownership over several device generations.

2300 KIYO E

Syndion® F-Series

TSV for high bandwidth memory and advanced packaging
High aspect ratio structures for CMOS image sensors
Large open area and high aspect ratio structures for advanced power devices, analog integrated circuits (ICs), microelectromechanical (MEMS) devices and wafer backside processing

SYNDION FS

Lam’s TCP 9600DFM is a metal etch solution for sub-150nm interconnect applications. It combines high system reliability and availability with new features that deliver excellent on-wafer performance, low defectivity, and optimum control of the etch chamber environment. The system integrates metal etch with microwave strip on the Alliance® multichamber platform and offers high throughput, low cost of consumables, and industry-leading availability and manufacturability for interconnect production at 150nm and beyond.

TCP 9600DFM

The 2300 Versys Metal L is part of Lam’s Versys Metal product family, which provides high-productivity capability on a flexible platform for performing critical etch steps in the semiconductor manufacturing process. The technology used is Reactive Ion Etch, and it provides solutions for interconnects. The product is designed to address industry challenges such as achieving repeatable profile and critical dimension control while maintaining high-volume, low-cost production. It offers superior CD, profile uniformity, and uniformity control, enabled by a symmetrical chamber design with independent process tuning features. Additionally, it has high availability, high yield, and exceptional process repeatability with proprietary chamber cleaning technology. The product is upgradable for low cost of ownership over several device generations. Key applications include TiN metal hardmask, high-density aluminum line, and aluminum pad.

2300 VERSYS METAL L

2300 VERSYS METAL N

2300 Syndion C is a product in the Syndion etch product family that provides the layer-by-layer process flexibility and control needed for cost-efficient via etch for TSV applications. It offers high process flexibility, superior profile control, and excellent uniformity to address multiple TSV etch applications. It also has a low cost of ownership due to high etch rates, excellent repeatability, and in-situ etching of multiple materials in the TSV stack. Both conventional single-step etch and rapidly alternating process (RAP) are supported. Key applications include TSV for CMOS 3D IC and TSV for image sensors.

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