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Mark II Sput Etch Chamber (chamber only) Process Kits: – 0020-10518 Pedestal – 3690-01364 Graphite Ring – 0200-09086 Pedestal QTZ Ring – 0020-09933 GDP Anodized Aluminum Turbo : Seiko-Seiki Edwards STP301CVB Match Box: 0010-09416OEM Model Description
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.Documents
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APPLIED MATERIALS (AMAT)
P5000 ETCH
Verified
CATEGORY
RIE
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
68081
Wafer Sizes:
Unknown
Vintage:
Unknown
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View AllAPPLIED MATERIALS (AMAT)
P5000 ETCH
CATEGORY
RIE
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
68081
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Mark II Sput Etch Chamber (chamber only) Process Kits: – 0020-10518 Pedestal – 3690-01364 Graphite Ring – 0200-09086 Pedestal QTZ Ring – 0020-09933 GDP Anodized Aluminum Turbo : Seiko-Seiki Edwards STP301CVB Match Box: 0010-09416OEM Model Description
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.Documents
No documents