Description

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Configuration

PVD/Sputter 1 1 Fully automated 25 wafer’s Cluster Tool with Three PVD Process Modules (One-Mo, One-AlScN and One-AlN) and One Trimming Module Cluster Tool Consists of the following components: 1A 1 Transfer Module (TM) • 5-ports, machined from a single block of aluminum, • “Genmark Automation” vacuum robot, • Omron retroreflective optical sensor in the transfer module provides wafer movement monitoring, • Independently pumped with Turbo/rough pumps. • Integrated Residual Gas Analyzer (RGA) 1B 1 LoadLock (LL) • Machined from a single block of aluminum. • Cassette indexing for 25 wafers is provided by Genmark Automation robot • Independently pumped with high-capacity rough pump. 1C 1 AlScN PVD Process Module • PM - Rectangular, machined from single aluminum block. • The Process Module is independently pumped. • Internal Water Cooling • Process controller- OPTO22 • Gas flow control- 2 BrooksInst MFC’s • Deposition source – Dual AC Magnetron with secondary DC power supply • Wafer Rotation • Integrated Laser Interferometer Thickness Monitor 1D 1 AlN PVD Process Module • PM - Rectangular, machined from single aluminum block. • The Process Module is independently pumped. • Internal Water Cooling • Process controller- OPTO22 • Gas flow control- 2 BrooksInst MFC’s • Deposition source – Dual AC Magnetron with secondary DC power supply • RF-substrate pre-clean, including RF power generator and matching network • Wafer Rotation • Integrated Laser Interferometer Thickness Monitor 1E 1 Trimming Module • Rectangular machined from single Aluminum block. • The Process Module is independently pumped with turbo/rough pumps. • Gas flow control 1 MFC • Module is based on focused ion beam source and X-Y substrate motion assembly • 180W Ion source – proprietary cold-cathode ion source based on accelerator with closedelectron drift. • Powered by High Voltage DC power supply • Process execution - automated. 1F 1 Mo PVD Process Module • PM - Rectangular, machined from single aluminum block. • The Process Module is independently pumped. • Internal Water Cooling • Process controller- OPTO22 • Gas flow control- 1 BrooksInst MFC’s • Deposition source – Dual DC Magnetron • Wafer Rotation • RF-substrate pre-clean, including RF power