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HITACHI N-6000
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    OEM Model Description
    Model N-6000, which was co-developed by Renesas Technology Corp. and Hitachi, Ltd., has six tungsten manipulation-probes mounted on SEM (scanning electron microscope), each of which has a point with a 50-nm radius. Manipulation-probes on Model N-6000 can directly touch the contacts that lead to components of transistors: source, drain, gate, substrate, etc. Model N-6000 can directly measure metal-oxide semiconductor characteristics, like small current leaks, threshold voltage shifts, contact resistances, etc. Model N-6000 makes a bridge between logical electrical characterization and physical characterization, and helps failure locations to be identified. It dramatically improves the efficiency of failure analysis.
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    HITACHI

    N-6000

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    Verified

    CATEGORY
    Probers

    Last Verified: 24 days ago

    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    74301


    Wafer Sizes:

    Unknown


    Vintage:

    Unknown

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    HITACHI N-6000

    HITACHI

    N-6000

    Probers
    Vintage: 0Condition: Used
    Last Verified24 days ago

    HITACHI

    N-6000

    verified-listing-icon
    Verified
    CATEGORY
    Probers
    Last Verified: 24 days ago
    listing-photo-2e0a10d235ee49d09ae315cbcb0831e4-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    74301


    Wafer Sizes:

    Unknown


    Vintage:

    Unknown


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Description
    No description
    Configuration
    No Configuration
    OEM Model Description
    Model N-6000, which was co-developed by Renesas Technology Corp. and Hitachi, Ltd., has six tungsten manipulation-probes mounted on SEM (scanning electron microscope), each of which has a point with a 50-nm radius. Manipulation-probes on Model N-6000 can directly touch the contacts that lead to components of transistors: source, drain, gate, substrate, etc. Model N-6000 can directly measure metal-oxide semiconductor characteristics, like small current leaks, threshold voltage shifts, contact resistances, etc. Model N-6000 makes a bridge between logical electrical characterization and physical characterization, and helps failure locations to be identified. It dramatically improves the efficiency of failure analysis.
    Documents

    No documents

    Similar Listings
    View All
    HITACHI N-6000

    HITACHI

    N-6000

    ProbersVintage: 0Condition: UsedLast Verified: 24 days ago