Description
No descriptionConfiguration
Initial Process: TEOS Available Process: TEOs / SiN / HDPOEM Model Description
The AMAT Centura DxZ is an advanced chemical vapor deposition (CVD) system tailored for advanced CMOS and MtM applications in the semiconductor industry, focusing on 150mm and 200mm wafer sizes. It excels in depositing ultra-thick oxides (≥20µm) and enables low-temperature processing (<200°C), making it ideal for high-performance devices. With its ability to produce conformal, low wet-etch-rate films and doped films with tunable refractive indices, the Centura DxZ offers versatility to meet diverse manufacturing demands. Its broad portfolio of processes includes TEOS, silane-based oxides, nitrides, low-k dielectrics, strain-engineered films, and litho-enabling films, providing semiconductor manufacturers with a comprehensive solution for optimal performance and efficiency in production processes.Documents
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APPLIED MATERIALS (AMAT)
CENTURA DxZ
Verified
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
90689
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
CENTURA DxZ
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
90689
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Initial Process: TEOS Available Process: TEOs / SiN / HDPOEM Model Description
The AMAT Centura DxZ is an advanced chemical vapor deposition (CVD) system tailored for advanced CMOS and MtM applications in the semiconductor industry, focusing on 150mm and 200mm wafer sizes. It excels in depositing ultra-thick oxides (≥20µm) and enables low-temperature processing (<200°C), making it ideal for high-performance devices. With its ability to produce conformal, low wet-etch-rate films and doped films with tunable refractive indices, the Centura DxZ offers versatility to meet diverse manufacturing demands. Its broad portfolio of processes includes TEOS, silane-based oxides, nitrides, low-k dielectrics, strain-engineered films, and litho-enabling films, providing semiconductor manufacturers with a comprehensive solution for optimal performance and efficiency in production processes.Documents
No documents