Applied Materials is committed to accelerating this new PPACt playbook for our customers and partners. We have the broadest and deepest portfolio of products for delivering PPACt innovations to the market. This portfolio encompasses the ability to create and deposit, shape and remove, modify, analyze, and connect materials and devices in new ways. We are unique in having a broad suite of process technology and metrology capabilities under one roof, and we have highly differentiated silicon and packaging lab capabilities. Our Integrated Materials Solutions co-optimize materials deposition, removal, modification, and analysis to create new materials and engineer new structures for high-performance, low-power chips at leading-edge nodes.

The system offers an integrated stress nitride deposition and UV cure that delivers tensile stress of up to 1.7GPa, while meeting low thermal budget requirements. The same chamber can deposit films with compressive stresses up to 3.5 GPa with extended RF capability. The process utilizes production-proven silane CVD technology to deliver superior step coverage (70%) and high-quality film with low hydrogen content while retaining excellent SiN etch-stop properties and pattern-loading results. The Applied Celera deposition and UV cure processes are integrated on the production-proven, high-throughput Producer platform with its flexible Twin Chamber® configuration and platform extendibility that enables customers to leverage the Producer toolset for multiple process nodes.

APPLIED MATERIALS (AMAT)

PRODUCER CELERA

The Applied Producer Celera PECVD system offers industry-standard tunable compressive and tensile high-stress silicon nitride films for strain engineering applications at advanced nodes.
The system offers an integrated stress nitride deposition and UV cure that delivers tensile stress of up to 1.7GPa, while meeting low thermal budget requirements. The same chamber can deposit films with compressive stresses up to 3.5 GPa with extended RF capability. The process utilizes production-proven silane CVD technology to deliver superior step coverage (70%) and high-quality film with low hydrogen content while retaining excellent SiN etch-stop properties and pattern-loading results. The Applied Celera deposition and UV cure processes are integrated on the production-proven, high-throughput Producer platform with its flexible Twin Chamber® configuration and platform extendibility that enables customers to leverage the Producer toolset for multiple process nodes.

PRODUCER GT CELERA

Low k Dielectric Films — Many integrated circuit manufacturers are now incorporating new low k dielectric materials in their copper-based chip designs to further improve interconnect speed. The Applied Producer Black Diamond® CVD low k system is used by several customers in volume production to produce some of the industry’s most advanced devices. Using conventional CVD equipment, the Black Diamond product provides customers with a proven, cost-effective way to transition to this new material. 

PRODUCER BLACK DIAMOND

PRODUCER GT APF

Applied Producer HARP (High Aspect Ratio Process) is a thermal non-plasma-based CVD oxide product that addresses the stringent gap-fill requirements of applications such as STI and PMD for advanced logic FinFET and memory technology nodes.

The Applied HARP process runs on the production-proven, high-throughput Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.

PRODUCER HARP

Lithography-Enabling Solutions — Applied offers several technologies on the Producer system to help chipmakers extend their current 193nm lithography tools, including the Applied APF (advanced patterning film) and the Applied DARC® (dielectric anti-reflective coating) films. Together, they provide a film stack with the precise dimensional control and compatibility needed to cost-effectively pattern nano-scale features without additional integration complexity. 

PRODUCER DARC

Building on APF's excellent etch selectivity and LER, APFe enables deposition of thicker layers than APF (e.g., in capacitor formation and metal contacts for memory devices), while maintaining the alignment transparency necessary for etching HAR vias.

PRODUCER APF-e

PRODUCER GT ETERNA

A complementary low k dielectric, called the Applied Producer BLOk (Barrier low k), enables the complete, multi-layer dielectric structure to benefit from low k technology. 

PRODUCER BLOk

The Applied Producer GT is a fast and cost-effective 300mm CVD platform that can process 180 wafers per hour. It has twice the throughput density of any competitive system and provides complete process transparency for PECVD applications for 45nm and beyond. The system incorporates several new components to maximize wafer handling efficiency, including a FX robot that can transfer 4 wafers simultaneously, wafer handling components that minimize defects, and a double-decker loadlock. The platform also has a high-capacity factory interface and integrated metrology capability. Additionally, the Producer GT is designed to improve serviceability, reducing preventative maintenance time by 25%.
To deliver unmatched productivity, the system incorporates several new components aimed at maximizing the system’s wafer handling efficiency and eliminating all wafer transport bottlenecks. Its FX robot allows simultaneous transfer of 4 wafers, enabling higher productivity for a 3-twin chamber configuration. Wafer handling components, designed to minimize defects, achieve 30% lower mechanical-based particle performance while maintaining high productivity. The platform’s double-decker loadlock reduces wafer handling time and increases chamber utilization. A high-capacity factory interface supports up to 4 FOUPs for operational efficiency and integrated metrology capability. The Producer GT has also been designed to improve platform serviceability, reducing preventative maintenance time by 25%.

PRODUCER GT3 APFE

The Applied Producer Black Diamond II is a second-generation dielectric deposition system that provides a lower k-value film for building faster 65 nm generation and below chip designs.

PRODUCER BLACK DIAMOND II

In 2007, Applied introduced a second generation of this technology, the Applied Producer BLOk II, for 45nm and below applications.

PRODUCER BLOk II

PRODUCER EXT

Widely used in traditional gate, polysilicon and aluminum interconnect lithography applications, DARC 193 is ideal for dual damascene interconnect schemes with its excellent adhesion to low-k dielectric films.

PRODUCER DARC 193

Producer GT Frontier

The Applied Materials PRODUCER SE is a chemical vapor deposition (CVD) system manufactured by Applied Materials, Inc. It is designed for depositing thin films onto semiconductor wafers in the semiconductor manufacturing process. 

PRODUCER SE

The Producer GT doubles the throughput of any competitive system, and enables a 30% reduction in cost of ownership and a 50% increase in wph/m2 footprint. The Producer GT supports the full portfolio of Applied’s PECVD1 technology applications with more than 30 world-class production-proven processes. It is capable of processing 150 wafers per hour (wph).

PRODUCER GT

Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications.

For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices.

These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.

PRODUCER GT PECVD

The AMAT Centura DxZ is an advanced chemical vapor deposition (CVD) system tailored for advanced CMOS and MtM applications in the semiconductor industry, focusing on 150mm and 200mm wafer sizes. It excels in depositing ultra-thick oxides (≥20µm) and enables low-temperature processing (<200°C), making it ideal for high-performance devices. With its ability to produce conformal, low wet-etch-rate films and doped films with tunable refractive indices, the Centura DxZ offers versatility to meet diverse manufacturing demands. Its broad portfolio of processes includes TEOS, silane-based oxides, nitrides, low-k dielectrics, strain-engineered films, and litho-enabling films, providing semiconductor manufacturers with a comprehensive solution for optimal performance and efficiency in production processes.

CENTURA DxZ

Applied Materials offers the Producer S system designed to deliver the same high productivity and throughput benefits as the first generation Producer with up to a 29% reduction in footprint. The significantly reduced footprint allows a greater number of Producer S tools to be facilitized in the cleanroom, resulting in lower COO and higher throughput per unit of fab space.

PRODUCER S

The Applied Producer GT is the industry’s fastest, most cost-effective 300mm CVD platform. Capable of processing 180wph within a very compact footprint, the Producer GT achieves twice the throughput density of any competitive system. Built on the highly successful Producer system, this new platform provides customers with complete process transparency for the full range of PECVD applications for 45nm and beyond while delivering 50% higher system throughput.To deliver unmatched productivity, the system incorporates several new components aimed at maximizing the system’s wafer handling efficiency and eliminating all wafer transport bottlenecks. Its FX robot allows simultaneous transfer of 4 wafers, enabling higher productivity for a 3-twin chamber configuration. Wafer handling components, designed to minimize defects, achieve 30% lower mechanical-based particle performance while maintaining high productivity. The platform’s double-decker loadlock reduces wafer handling time and increases chamber utilization. A high-capacity factory interface supports up to 4 FOUPs for operational efficiency and integrated metrology capability. The Producer GT has also been designed to improve platform serviceability, reducing preventative maintenance time by 25%.

PRODUCER GT CHAMBER

Our Producer platform is the fastest and most cost-effective in the industry, capable of processing more than three wafers every minute in a highly compact footprint. It features a robot that can simultaneously transfer four wafers between its three paired processing stations and unique double-decker vacuum loadlocks.

PRODUCER III

PRODUCER SE APF

The Centura 5200 DXZ is used for advanced 150mm and 200mm CVD technology in the advanced CMOS and MtM segments. It can be used for ultra-thick oxides (≥20µm), low-temperature processing (<200°C), conformal, low wet-etch-rate films, and doped films with tunable refractive indices. The system can handle a variety of MtM substrates (including SiC wafers) reliably and carefully from load lock wafer mapping to clear wafer orientation to wafer placement.

CENTURA 5200 DXZ

PRODUCER XP PRECISION

PRODUCER PECVD

PRODUCER GT SICONI CLEAN

AMAT / APPLIED MATERIALS CENTURA PE CVD is Reactors / MOCVD system. The CENTURA PE CVD can be used with 8” wafer size.

CENTURA PE CVD

Applied Materials' APF™ (Advanced Patterning Film) strippable CVD hardmask, the APF/DARC film stack delivers litho-enabling improvement in etch selectivity, CD control, and line edge roughness.

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

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PRODUCER GT APF

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